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Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
As used herein, the term "high-dielectric-constant" means a dielectric constant greater than about 50 at device operating temperature. As used herein the term "...
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Nitride based semiconductor device and manufacture thereof
It is an object of the present invention to address the above problems and provide a nitride semiconductor device, in particular a semiconductor light emitting device ...
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Evanescent scanning of biochemical array
OF THE INVENTION This invention provides apparatuses and methods for high-contrast scanning of (or detection of light from) a chemical (e.g., a polymer) array. E...
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Oriented conductive film and process for preparing the same
An object of the present invention is to provide an epitaxial or oriented conductive thin film of an oxide prepared from an organometallic compound, which is useful as a ...
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Superconductor
The superconductor according to this invention comprises an oxide film deposited on a metal film formed on a substrate, these oxide containing A, B and Cu and being a ...
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Method of making barium strontium titanate (BST) thin film by erbium donor doping
The present invention relates to a method of producing and a structure containing barium and/or strontium titanate dielectric films (hereafter referred to as BST) with ...
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Volume control module for use in diving
It is therefore a primary object of the present invention to provide a volume control device for use in diving which enables a diver to control his or her buoyancy ...
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Oriented ferroelectric thin film element
The present invention has been completed under the above circumstance in the conventional technique. An object of the present invention is to provide an oriented ...
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Method of packaging integrated circuits
The above and other objects are met by a method of assembling a flip chip in a package. Solder bumps are attached to a first flip chip and to a second flip chip. A ...
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Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
A Ge buffer layer directly or indirectly on Si oxidizes much less readily and can be used to prevent or minimize the formation of the low dielectric constant layer. An ...
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