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Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
We claim: 1. A method of forming a bipolar transistor with a predetermined gain and having a low resistance, polycrystalline/monocrystalline silicon emitter contact ...
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Method of forming a carbon film on a substrate made of an oxide material
An object of the present invention is to provide, with due consideration to the drawbacks of such conventional devices, a carbon-type film formed on a substrate wherein ...
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Method for producing a fully walled emitter-base structure in a bipolar transistor
An object of the present invention is to provide a process for producing a bipolar transistor structure which is self-aligned, employing a metal contacted ...
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Rare earth slab doping of group III-V compounds
It is an object of this invention to provide a semiconductor film having a high carrier mobility while also being substantially insensitive to temperatures changes, such ...
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Superconducting thin film
What is claimed is: 1. A superconducting thin film of a compound oxide represented by YBa.sub.2 Cu.sub.3 O.sub.y, in which "y" is a number in the range of 6<y<8 ...
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Process of fabricating a semiconductor substrate
An object of the present invention is to provide a substrate of good film thickness distribution with a good productivity in the preparation of an SOI substrate of good ...
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Thin film solar cell and production method therefor
An object of the present invention is to provide an inexpensive thin film solar cell with high performance and reliability produced in a simple process and a method for ...
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Soluble precursor to poly (cyanoterephthalydene) and method of preparation
The above described problems and others are substantially solved and the above purposes and others are realized in a method of preparing PPV derivatives including ...
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Complementary junction heterostructure field-effect transistor
It is a primary object of the present invention to obviate the problems of the prior art complimentary III-V field-effect transistors. Another object of the present ...
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Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
It is, therefore, an object of this invention to provide a magnetic field sensor of an indium antimonide film or indium arsenide film supported on an elemental ...
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