 Data storage device |
| Disclosed are electron emitters and data storage devices that include electron emitters. In one ... |
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| Method of storing a data bit including melting and cooling a volume of alloy therein |
| In the following detailed description of embodiments of the invention, reference is made to the ... |
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| Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
| A filter is formed using robust and high Q acoustic resonators, where each resonator has its own ... |
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| Acoustic wave device and process for forming the same |
| OF THE DRAWINGS FIG. 1 illustrates schematically, in cross section, a portion of a microelectronic ... |
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| Method and apparatus for examining fiber material traveling in a fiber processing machine |
| 1. An apparatus for evaluating a fiber web running in a card, comprising: (a) a camera for scanning ... |
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| Optical memory medium and its information recording and erasing method and apparatus |
| An object of the present invention is to provide such an optical memory medium that it is heated ... |
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| Method and apparatus for improved energy readout |
| Accordingly, an object of the present invention is to provide systems that achieves better system DQ... |
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| Semiconductor integrated circuit device having dummy pattern effective against micro loading effect |
| It is therefore an important object of the present invention to provide a semiconductor integrated ... |
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| Logic cell having efficient optical proximity effect correction |
| OF THE INVENTION There will now be described embodiments of this invention with reference to the ... |
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| Layout pattern for improved MOS device matching |
| What is claimed is: 1. A circuit layout, comprising: four or more metal oxide semiconductor field ... |
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Lighting system
| Details |
Inventors: Okuyama, Hiroyuki; Doi, Masato; Biwa, Goshi; Oohata, Toyoharu; Kikutani, Tomoyuki;
Assignee: Sony Corporation (Tokyo, JP)
Primary Examiner: Whitehead, Jr.; Carl
Assistant Examiner: Dolan; Jennifer M
Attorney, Agent or Firm: Bell, Boyd & Lloyd LLC
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof. |
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DETAILED DESCRIPTION OF THE INVENTION A semiconductor light-emitting device according to an embodiment of the present invention includes a substrate and a crystal layer formed thereon, the crystal layer having a slant crystal plane slanting to (i.
e.
, diagonally intersecting) the principal plane of the substrate, and further includes a layer of a first conductivity type, an active layer, and a layer of a second conductivity type which are formed parallel to the slant crystal plane on the crystal layer.
The substrate used in an embodiment of the present invention is not specifically restricted so long as it forms a crystal layer having a slant crystal plane slanting to the principal plane of the substrate.
Various substrates are available including, for example, sapphire (Al2O3, having A-plane, R-plane, or C-plane), SiC (including 6H, 4H, and 3C), GaN, Si, ZnS, ZnO, AlN, LiMgO, GaAs, MgAl2O4, and InAlGaN.
Of the above-described substrates, hexagonal or cubic crystal based substrates are preferred, with the hexagonal substrates being most preferred.
A sapphire substrate whose principal plane is the C-plane can be used.
In general, the C-plane is a plane on which a gallium nitride (GaN) based compound for a semiconductor is usually grown, and the C-plane as the principal plane of the substrate may have a plane orientation which is inclined at an angle of 5 or 6 degrees.
In an embodiment, the substrate itself is not a constituent of the light-emitting device and is used merely to hold device parts and is removed before the device is completed.
In an embodiment, the crystal layer formed on the substrate has a slant crystal plane slanting to the principal plane of the substrate.
This crystal layer is not specifically restricted so long as it permits the light-generating region (mentioned later) to be formed thereon, which consists of a layer of a first conductivity type, an active layer, and a layer of a second conductivity type, and is parallel to the slant crystal plane slanting to the principal plane of the substrate
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Active Solid-state 
