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| Nitride semiconductor device |
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Magnetic cell and magnetic memory
| Details |
Inventors: Nakamura, Shiho; Haneda, Shigeru; Ohsawa, Yuichi;
Assignee: Kabushiki Kaisha Toshiba (Tokyo, JP)
Primary Examiner: Elms; Richard
Assistant Examiner: Nguyen; Hien
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
A magnetic cell includes a first magnetically fixed part including a laminated structure where a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer are laminated, a second magnetically fixed part including a third ferromagnetic layer, a fourth ferromagnetic layer provided between the first and the second magnetically fixed parts, a first intermediate layer provided between the first magnetically fixed part and the fourth ferromagnetic layer, and a second intermediate layer provided between the second magnetically fixed part and the fourth ferromagnetic layer, a direction of magnetization of the fourth ferromagnetic layer being determined under an influence of spin-polarized electrons upon the fourth ferromagnetic layer by passing a current between the first and the second magnetically fixed parts. |
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DETAILED DESCRIPTION According to an aspect of the invention, there is provided a magnetic cell comprising: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers, the direction of magnetization of the third ferromagnetic layer being determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
According to other aspect of the invention, there is provided a magnetic cell comprising: a first magnetically fixed part including a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second magnetically fixed part including a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second magnetically fixed part, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first magnetically fixed part and the third ferromagnetic layer; and a second intermediate layer provided between the second magnetically fixed part and the third ferromagnetic layer, an easy axis of magnetization of the third ferromagnetic layer being substantially in parallel to the first direction, at least one of the first and the second magnetically fixed parts including a laminated structure where ferromagnetic layers and at least one nonmagnetic layer are laminated in turn and the ferromagnetic layers are antiferromagnetically coupled via the nonmagnetic layer, the first ferromagnetic layer adjoining the first intermediate layer, the second ferromagnetic layer adjoining the second intermediate layer, and the direction of magnetization of the third ferromagnetic layer being determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second magnetically fixed parts
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Active Solid-state 
