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Optical memory medium and its information recording and erasing method and apparatus
An object of the present invention is to provide such an optical memory medium that it is heated from the inside to prevent the substrate from being heated and the ...
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Method and apparatus for improved energy readout
Accordingly, an object of the present invention is to provide systems that achieves better system DQE by more completely reading out the latent image from the storage ...
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Semiconductor integrated circuit device having dummy pattern effective against micro loading effect
It is therefore an important object of the present invention to provide a semiconductor integrated circuit device a dummy pattern of which makes a micro loading effect ...
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Logic cell having efficient optical proximity effect correction
OF THE INVENTION There will now be described embodiments of this invention with reference to the accompanying drawings. First, a first embodiment of this invention is ...
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Layout pattern for improved MOS device matching
What is claimed is: 1. A circuit layout, comprising: four or more metal oxide semiconductor field effect transistors each said transistor having a rectangular channel ...
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Semiconductor integrated circuit device, method of testing semiconductor integrated circuit device and method of manufacturing semiconductor integrated circuit device
Prior to the invention, the present inventors studied the possibility of high-speed testing of the RAM under the condition in which a low-speed testing apparatus is used....
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Nitride semiconductor device
(1) A light emitting device according to the present invention is a type of nitride semiconductor device having a structure where an active layer of a quantum well ...
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EEPROM array using 2-bit non-volatile memory cells with serial read operations
FIG. 3 is a schematic diagram illustrating a memory block 100 in accordance with one embodiment of the present invention. Memory block 100 uses a plurality of 2-bit ...
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Semiconductor blocking layer for preventing UV radiation damage to MOS gate oxides
A system and apparatus is provided for preventing damage to gate oxide due to ultraviolet (UV) radiation associated with semiconductor processes. Included is a substrate ...
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Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory
The present invention addresses the challenges existing in fabrication of such SONOS type structures. The present invention meets the need for a method of fabricating a ...
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