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Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
| Details |
Inventors: Cook, Robert K.; Knepper, Ronald W.; Kulkarni, Subodh K.; Lange, Russell C.; Ronsheim, Paul A.; Subbanna, Seshadri; Tejwani, Manu J.; Yun, Bob H.;
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Examiner: Hearn; Brian E.
Assistant Examiner: Dang; Trung
Attorney, Agent or Firm: Romanchik; Richard A., Balconi-Lamica; Michael J.
A method of controlling the interfacial oxygen concentration of a monocrystalline/polycrystalline emitter includes the steps of: passivating the monocrystalline silicon surface by immersing the wafer in a diluted HF acid solution; transferring the wafer into a high vacuum environment; heating the wafer to between 400.degree. and 700.degree. C.; exposing the monocrystalline silicon surface to a gas having a partial pressure of oxygen of between 10.sup.-5 to 1 Torr for between 1 and 100 minutes; and, depositing polysilicon onto the monocrystalline silicon surface. |
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DETAILED DESCRIPTION We claim: 1.
A method of forming a bipolar transistor with a predetermined gain and having a low resistance, polycrystalline/monocrystalline silicon emitter contact interface, comprising the steps of: a) determining a first concentration of interfacial oxygen at the polycrystalline/monocrystalline silicon interface necessary to provide the specified gain according to a predetermined schedule correlating transistor gain to the concentration of interfacial oxygen at the polycrystalline/monocrystalline silicon interface; b) passivating the monocrystalline silicon with hydrogen; c) heating the monocrystalline silicon to a predetermined temperature; d) exposing the monocrystalline silicon for a predetermined length of time to a gas having a predetermined partial pressure of oxygen in order to oxidize a portion of the monocrystalline silicon in order to provide said first concentration of interfacial oxygen at the polycrystalline/monocrystalline silicon interface in accordance with said predetermined schedule; and, e) depositing polycrystalline silicon onto the monocrystalline silicon, wherein said first concentration of interfacial oxygen yields a specific emitter contact resistance of less than 100 ohms-um.
sup.
2.
2.
A method of forming a bipolar transistor with a specified gain and having a low resistance, polycrystalline/monocrystalline silicon emitter according to claim 1, wherein step b) comprises immersing the substrate in a first solution comprised of HF.
3.
A method of forming a bipolar transistor with a specified gain and having a low resistance, polycrystalline/monocrystalline silicon emitter according to claim 2, wherein step b) comprises immersing the substrate in a first solution comprised of dilute 10:1 HF.
4.
A method of forming a bipolar transistor with a specified gain and having a low resistance, polycrystalline/monocrystalline silicon emitter according to claim 1, wherein said predetermined temperature is between 400 and 700 degrees centigrade.
5.
A method of forming a bipolar transistor with a specified gain and having a low resistance, polycrystalline/monocrystalline silicon emitter according to claim 1, wherein said predetermined amount of time is between 1 and 100 minutes
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Active Solid-state 
