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Method for fabricating resistors within semiconductor integrated circuit devices
| Details |
Inventors: Haddad, Nadim; Alcorn, Charles N.; Maimon, Jonathan; Rockett, Leonard R.; Doyle, Scott;
Assignee: BAE Systems Information and Electronic Systems Integration, Inc. (Nashua, NH)
Primary Examiner: Wilson; Allan R.
Assistant Examiner: Fenty; Jesse A
Attorney, Agent or Firm: Long; Daniel J., Ng; Antony P. Bracewell & Patterson, L.L.P.
A method for fabricating resistors within a semiconductor integrated circuit device is disclosed. A resistor is fabricated by first depositing a passivation layer on a semiconductor substrate having multiple transistors previously formed thereon. Next, a first contact window and a second contact window are formed through the first passivation layer at a first contact location and a second contact location, respectively. The first and second contact windows are then filled with metal, such as tungsten, and the metal at the first and second contact windows is planarized to form a first bottom contact and a second bottom contact, respectively. A resistive film, such as polysilicon, subsequently deposited over the first passivation layer. Next, a second passivation layer is formed over the resistive film. Finally, a first top contact and a second top contact are formed to respectively connect the first bottom contact and the second bottom contact to the resistive film. |
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DETAILED DESCRIPTION In accordance with a preferred embodiment of the present invention, a resistor is fabricated by first depositing a passivation layer on a semiconductor substrate having multiple transistors previously formed thereon.
Next, a first contact window and a second contact window are formed through the first passivation layer at a first contact location and a second contact location, respectively.
The first and second contact windows are then filled with metal, such as tungsten, and the metal at the first and second contact windows is planarized to form a first bottom contact and a second bottom contact, respectively.
A resistive film, such as polysilicon, subsequently deposited over the first passivation layer.
Next, a second passivation layer is formed over the resistive film.
Finally, a first top contact and a second top contact are formed to respectively connect the first bottom contact and the second bottom contact to the resistive film.
All objects, features, and advantages of the present invention will become apparent in the following detailed written description.
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