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| Data storage device |
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| Method of storing a data bit including melting and cooling a volume of alloy therein |
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| Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
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| Acoustic wave device and process for forming the same |
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| Method and apparatus for examining fiber material traveling in a fiber processing machine |
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| Optical memory medium and its information recording and erasing method and apparatus |
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| Method and apparatus for improved energy readout |
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| Semiconductor integrated circuit device having dummy pattern effective against micro loading effect |
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Method for forming a phase change memory
| Details |
Inventors: Chen, Hsu-Shun;
Assignee: Macronix International Co., Ltd. (Hsinchu, TW)
Primary Examiner: Lee; Eddie
Assistant Examiner: Magee; Thomas
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
A method of programming a first memory cell in an array of at least four memory cells in a semiconductor device, each memory cell including a polysilicon gate, first and second spaced-apart diffused regions, a silicide layer provided over the polysilicon gate, an oxide spacer provided contiguous with a vertical sidewall of the polysilicon gate, and a layer of phase change material provided over at least a portion of the silicide layer, contiguous with the oxide spacer, and over the first diffused region. The method includes electrically coupling the second diffused region of a first memory cell to a first bit line, electrically coupling the first diffused region of the first memory cell to a first word line, electrically coupling the second diffused region of a second memory cell to a second bit line, electrically coupling the first diffused region of the second memory cell to the first word line, electrically coupling the second diffused region of a third memory cell to the first bit line, electrically coupling the first diffused region of the third memory cell to a second word line, electrically coupling the second diffused region of a fourth memory cell to the second bit line, electrically coupling the first diffused region of the fourth memory cell to the second word line, and applying a high voltage pulse to the first word line and second bit line, and a low voltage pulse to the second word line and first bit line. |
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DETAILED DESCRIPTION In accordance with the invention, there is provided a semiconductor device having a first memory cell that includes a substrate, an insulation layer disposed over the substrate, a first polysilicon gate formed over the insulation layer, at least one oxide spacer formed contiguous with one vertical sidewall of the first polysilicon gate, a silicide formed over a horizontal surface of the first polysilicon gate, a first phase change layer formed over a portion of the silicide, contiguous with the oxide spacer, and over a portion of the insulation layer, a first diffused region formed in the substrate, wherein the first phase change layer is formed above the first diffused region, and a second diffused region formed spaced-apart from the first diffused region in the substrate.
In one aspect, the device further includes a second memory cell that shares the second diffused region with the first memory cell.
Also in accordance with the present invention, there is provided a method for manufacturing a semiconductor device having an array of memory cells that includes providing a first transistor having first and second spaced-apart diffused regions, a first polysilicon gate, oxide spacers along vertical sidewalls of the first polysilicon gate, and a first silicide over a horizontal surface of the first polysilicon gate, providing a second transistor having second and third spaced-apart diffused regions, a second polysilicon gate, oxide spacers along vertical sidewalls of the second polysilicon gate, and a second silicide over a horizontal surface of the second polysilicon gate, wherein the first and second transistors share the second diffused region, providing a layer of phase change material over the first and second transistors, and defining and etching the phase change layer to form at least a first and second phase change layers, the first layer providing over the first transistor and the first diffused region, and the second layer providing over the second transistor and the third diffused region
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Active Solid-state 
