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Method of epitaxially growing compound semiconductor materials
| Details |
Inventors: Shastry, Shambhu K.;
Assignee: GTE Laboratories Incorporated (Waltham, MA)
Primary Examiner: Straub; Gary P.
Assistant Examiner: Breneman; R. Bruce
Attorney, Agent or Firm: Cannon, Jr.; James J., Keay; David M.
Method of MOVPE growing a compound semiconductor material, for example GaAs, on a substrate, for example Si. Sodium ions are first introduced onto the substrate surface as by immersing it in a cleaning solution containing sodium. A two-step MOVPE process is then employed to grow device quality single crystal compound semiconductor material on the surface of the substrate. |
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DETAILED DESCRIPTION The present invention is concerned with the epitaxial growth of semiconductor materials on substrates of essentially single crystal semiconducting or insulating materials.
More specifically, the method is directed to the MOVPE growth of compound semiconductor materials on substrates of compound semiconductor materials, silicon, and Al.
sub.
2 O.
sub.
3.
The compound semiconductor materials of concern includes III-V compound semiconductor materials such as GaAs, InP, InAs, InGaAs, GaAlAs, and InGaAsP, and also combinations thereof which form III-V heterojunction materials such as GaAlAs/GaAs and InGaAsP/InP.
The method may also be employed for the homo-epitaxial and hetero-epitaxial growth of II-VI compound semiconductor materials.
Various conductivity type imparting materials may be introduced into compound semiconductor materials to establish the desired conductivity characteristics of regions thereof.
Typical conductivity type imparting materials include silicon, sulphur, tellurium, selenium, beryllium, zinc, cadmium, and magnesium.
The substrate and epitaxially grown material may be the same, for example gallium arsenide on gallium arsenide, or may be different, for example gallium arsenide on silicon or Al.
sub.
2 O.
sub.
3 (sapphire).
In order for the epitaxially grown material to be of device quality the substrate is essentially single crystal material.
Substrates of Al.
sub.
2 O.
sub.
3 (sapphire or alumina) may have a large number of discontinuities in their single crystal structure relative to single crystal silicon and still be considered as essentially single crystal for the purpose of serving as a substrate for the growth of hetero-epitaxial layers of compound semiconductor materials.
In practicing the method of the invention for the homo-epitaxial or hetero-epitaxial growth of compound semiconductor materials, a trace amount of sodium (Na) ions is introduced onto the surface of the substrate which is to become the interface between the substrate and the epitaxially grown compound semiconductor material
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Active Solid-state 
