Method of forming a perovskite structure semiconductor capacitor

DETAILED DESCRIPTION We claim: 1.
A method of making a capacitor comprising the steps of: forming on a substrate an insulation film having a first contact hole therein so that a surface of said substrate is exposed therethrough; forming a first electrode, wherein a conductive plug, an anti-oxide film and a Perovskite structure conductive seed layer are sequentially stacked on a portion of said insulation film including said first contact hole; forming first side wall spacers on each side of said first electrode; forming each of a Perovskite structure first dielectric film, a Perovskite structure second electrode and a Perovskite structure second dielectric film sequentially on said first insulation film including said first electrode and said first side wall spacers; etching each of said first dielectric film, said second electrode and said second dielectric film to form a second contact hole, so that a portion of said first electrode is exposed therethrough; forming second side wall spacers on a wall of said second contact hole; forming a Perovskite structure third electrode and a second insulation film sequentially on said second dielectric film including said second contact hole; etching each of said second insulation film, said third electrode and said second dielectric film, to form a third contact hole so that a portion of said second electrode is exposed therethrough; forming third side wall spacers on each wall of said third contact hole; and forming a fourth electrode on said second insulation film including said third contact hole.
2.
The method of claim 1, wherein said Perovskite structure conductive seed layer is formed of one selected from the group comprising YBa.
sub.
2 Cu.
sub.
3 O.
sub.
7-x, La.
sub.
1-x Sr.
sub.
x Co.
sub.
1 O.
sub.
3 (x=0.
5) and La.
sub.
2-x Sr.
sub.
x Cu.
sub.
1 O.
sub.
4 (x=0.
15).
3.
The method of claim 1, wherein said anti-oxide film is formed of RuOx.
4.
The method of claim 1, wherein said conductive plug and anti-oxide film are poly-crystalline.
5.
The method of claim 1, wherein said Perovskite structure second and third electrodes each consist of one selected from the group comprising CaRuO