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Method-of-manufacturing-thin-compound-oxide-film-and-apparatus-for-manufacturing-thin-oxide-film

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Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film

Details

Inventors: Murakami, Toshiaki; Moriwaki, Kazuyuki;
Assignee: Nippon Telegraph and Telephone Corporation (Tokyo, JP)
Primary Examiner: Bueker; Richard
Assistant Examiner:
Attorney, Agent or Firm: Frishauf, Holtz, Goodman & Woodward

In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.

DETAILED DESCRIPTION The present invention has an object to eliminate the conventional drawbacks described above, and has as its object to provide a method of manufacturing a thin film of a compound oxide wherein energy of an oxygen beam can be optimized, precise composition control can be achieved, a high-density thin oxide film can be formed, and low-temperature epitaxial growth can be achieved by a combination of an energy effect of the oxygen beam and a high vacuum, and an apparatus for forming a thin oxide film.
In order to achieve the above object of the present invention, there is provided a method of manufacturing a thin compound oxide film, comprising the steps of: evaporating different types of elements for forming a compound oxide; depositing the different types of evaporated elements on a substrate and moving the deposited elements to a proper crystal site; and implanting oxygen ions or neutral oxygen particles having energy of 10 to 200 eV in a growing thin film, and aligning the elements and the oxygen ions or neutral oxygen particles as a crystal film of a compound oxide, thus epitaxially growing the thin compound oxide film.
An apparatus for forming a thin oxide film comprises a film formation chamber which is adapted to be evacuated and in which a substrate is placed; material feed means for feeding a material of a thin oxide film to be formed on the substrate; oxygen ion generating means; mass separating means for separating oxygen ions from an oxygen plasma generated by the oxygen ion generating means; and oxygen ion decelerating means for decelerating the separated oxygen ions to a speed corresponding to energy of 10 to 200 eV and for implanting the decelerated oxygen ions as an oxygen ion beam in a thin oxide film which is being formed on the substrate.
With the above constitution of the present invention, the method of manufacturing a thin compound oxide film and an apparatus for manufacturing a thin oxide film provide a thin film free from oxygen defects and composition errors

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