 Method of forming a silicon nitride layer |
| The above problems and others are at least partially solved and the above purposes and others are ... |
|
| Optical attenuator using polarization modulation and a feedback controller |
| The present invention provides an optical power regulator that employs a variable optical ... |
|
| Wavelength insensitive passive polarization converter employing electro-optic polymer waveguides |
| OF THE INVENTION A passive polarization converter of present invention is equipped with poling ... |
|
| Enhanced protective lens cover for an infrared thermometer |
| OF THE INVENTION First briefly in overview, the present invention is directed to novel probe cover ... |
|
| Lead silicate based capacitor structures |
| In accordance with the present invention, a capacitor and method for making such a capacitor for ... |
|
| Piezoelectric resonators on a differentially offset reflector |
| The present invention fabricates a plurality of resonators upon a single substrate, which ... |
|
| Method for the transfer of thin layers monocrystalline material onto a desirable substrate |
| The present invention relates to a method for the transfer of a thin monocrystalline layer from an ... |
|
| Transmit/receive compensation |
| The invention disclosed herein is a new technique to make the most efficient use of the scarce ... |
|
| Selective hemispherical grain silicon deposition |
| A primary goal of the invention is to provide one or more approaches to improving the robustness of ... |
|
| Tunable dielectric constant oxide and method of manufacture |
| A method for manufacturing a semiconductor device is shown in which a silicon oxide film acts as an ... |
|
|
Nitride based semiconductor device and manufacture thereof
| Details |
Inventors: Imai, Hideaki; Miyata, Kunio; Hirai, Tadahiko;
Assignee: Asahi Kasei Kogyo Kabushiki Kaisha (Osaka, JP)
Primary Examiner: Fahmy; Wael
Assistant Examiner: Abraham; Fetsum
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
A nitride semiconductor device is made using a molecular beam epitaxy growth apparatus having a gas source for supplying a compound including gaseous nitrogen, solid body sources for supplying Group III constituents, and sources for supplying n-type and p-type dopants. A gaseous state compound containing nitrogen, and a Group III constituent is supplied to the surface of a substrate, wherein the substrate is at a temperature of 300.degree. to 1000.degree. C. and is under a pressure of less than 10.sup.-5 Torr, to produce a first layer of oriented polycrystalline nitride semiconductor on the substrate at a growth rate of 0.1 to 20 Angstroms/second. Subsequently, a gaseous state compound containing nitrogen and a Group III constituent is supplied to the surface of the first layer of the substrate to produce a single crystal nitride semiconductor layer on the first layer at a growth rate of 0.1 to 10 Angstroms/second. The resultant nitride semiconductor device comprises a substrate, a first layer of an oriented polycrystalline nitride semiconductor of less than 5000 Angstroms thickness and disposed directly on the substrate, an operating layer of a single crystal nitride semiconductor disposed directly on the first layer, and at least two electrical terminals connected at predetermined locations, with at least one terminal being connected to the first layer. |
|
DETAILED DESCRIPTION It is an object of the present invention to address the above problems and provide a nitride semiconductor device, in particular a semiconductor light emitting device having good properties in the ultraviolet to orange range.
The present inventor carried out exhaustive research into the above problems.
In this research a substrate surface having a periodic atomic spacing in at least one direction was used.
An oriented polycrystalline nitride semiconductor with the atomic spacing of the lattice surface thereof close to an integer multiple of that of the substrate was grown directly on the surface of the substrate.
It was found that by this procedure a single crystal nitride semiconductor thin film having excellent crystal characteristics in spite of being extremely thin could be grown on the oriented polycrystalline nitride semiconductor.
It thus became evident that by following this procedure semiconductor devices having excellent characteristics could be obtained.
The nitride semiconductor device of the present invention, thus comprises a substrate, first layer of an oriented polycrystalline nitride semiconductor of less than 500 Angstroms thickness disposed directly on the substrate, an operating layer of a single crystal nitride semiconductor disposed directly on the first layer, and has at least two electrical terminals connected at predetermined positions, with at least one of the terminals connected to the first layer.
Furthermore, the method of manufacture of the nitride semiconductor device of the present invention uses a molecular beam epitaxy method having a gas source for supplying a compound including nitrogen in a gaseous state, a solid body source for supplying Group III constituents, and a source for supplying n-type and p-type dopants.
A gaseous state compound including nitrogen, and a Group III constituent are supplied to the surface of the substrate, with the substrate at a temperature of 300.
degree.
to 1000.
degree.
C.
, under a pressure of less than 10
|
|
Active Solid-state 
