 Non-volatile memory utilizing a thin film, floating gate, amorphous transistor |
| What is claimed is: 1. A non-volatile memory comprising: data storing means comprising an amorphous,... |
|
| Security unit for use in memory card |
| Accordingly, an object of the present invention is to provide a security unit that allows security ... |
|
| Nonvolatile memory device |
| Accordingly, it is an object of the present invention to provide a programmable nonvolatile logic ... |
|
| Device and method for pulse width control in a phase change memory device |
| The invention is directed to an approach to programming phase-change memory devices, such as ... |
|
| Tunnel diode load for ultra-fast low power switching circuits |
| The key element of my invention is the use of a tunnel diode for rapid discharging of a capacitor ... |
|
| Flat bed scanner system and method |
| A flat bed scanner system and method of scanning a planar transparent member carrying an original ... |
|
| Vibratory transducer |
| OF THE PREFERRED EMBODIMENTS Turning now to FIGS. 4-7, which depicts a first illustrative ... |
|
| Method of forming single crystalline magnesia spinel film |
| The present invention has been achieved in order to solve the above described problem. For a method ... |
|
| Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| The present invention has an object to eliminate the conventional drawbacks described above, and ... |
|
|
Nitride semiconductor device
| Details |
Inventors: Kozaki, Tokuya;
Assignee: Nichia Corporation (Tokushima, JP)
Primary Examiner: Nelms; David
Assistant Examiner: Nguyen; Thinh T
Attorney, Agent or Firm: Nixon & Vanderhye PC
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side. |
|
DETAILED DESCRIPTION (1) A light emitting device according to the present invention is a type of nitride semiconductor device having a structure where an active layer of a quantum well structure, which comprises a well layer made of a nitride semiconductor that includes In, and a barrier layer made of a nitride semiconductor, is sandwiched by a p-type nitride semiconductor layer and an n-type nitride semiconductor layer, wherein the light emitting device according to the present invention is characterized in that the above active layer has a first barrier layer, that is arranged in a position nearest to the above p-type nitride semiconductor layer, and a second barrier layer, that is different from the first barrier layer, as the above barrier layer and is characterized in that the above first barrier layer does not substantially include an n-type impurity while the above second barrier layer includes an n-type impurity.
Here, though, barrier layers, other than the first barrier layer and the second barrier layer among the barrier layers in the active layer, are not particularly limited, in the case of usage as a laser device or as a light emitting device of high power, they are preferably doped with an n-type impurity or are not doped with any impurities.
Though, in a conventional multiple quantum well-type thereinafter referred to as MQW-type) nitride semiconductor device, all the barrier layers are, in general, doped with an n-type impurity, such as Si, in order to enhance light emission efficiency by increasing the initial electron concentration in the active layer, a nitride semiconductor device of the present invention has a barrier layer, that is doped with an n-type impurity in the same manner as in the prior art, while an n-type impurity is not substantially included only in the first barrier layer that is nearest to the p-type nitride semiconductor layer.
In such a structure, characteristics with respect to the device lifetime and the reverse withstanding voltage of the nitride semiconductor device can be improved
|
| Related patents |
|
|
EEPROM array using 2-bit non-volatile memory cells with serial read operations
FIG. 3 is a schematic diagram illustrating a memory block 100 in accordance with one embodiment of the present invention. Memory block 100 uses a plurality of 2-bit ...
|
|
|
Semiconductor blocking layer for preventing UV radiation damage to MOS gate oxides
A system and apparatus is provided for preventing damage to gate oxide due to ultraviolet (UV) radiation associated with semiconductor processes. Included is a substrate ...
|
|
|
Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memory
The present invention addresses the challenges existing in fabrication of such SONOS type structures. The present invention meets the need for a method of fabricating a ...
|
|
|
UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL
What is claimed is: 1. A SONOS flash memory device, comprising: a SONOS flash memory cell; and at least one UV-protective layer, wherein the UV-protective layer ...
|
|
|
Temperature responsive valve assembly for a pneumatic spring
The gas spring assembly according to the present invention provides a temperature responsive valve assembly having a valve body, a seal, a bi-metal valve and a locking ...
|
|
|
Method for fabricating resistors within semiconductor integrated circuit devices
In accordance with a preferred embodiment of the present invention, a resistor is fabricated by first depositing a passivation layer on a semiconductor substrate having ...
|
|
|
Device and method for emitting output light using quantum dots and non-quantum fluorescent material
A device and method for emitting output light utilizes both quantum dots and non-quantum fluorescent material to convert at least some of the original light emitted from ...
|
|
|
Power injector apparatus
As mentioned above, the main object of the present invention is to provide a power injector apparatus that can be adapted to two power sources, one from the Internet and ...
|
|
|
Integrated circuit having a void between adjacent conductive lines
The invention overcomes the disadvantages and difficulties of the prior art by introducing new methods and devices wherein the area between closely spaced conductors ...
|
|
|
Stimulable phosphor sheet storing cassette, radiation image photographing apparatus, photographing information registration apparatus, and radiation image information reading apparatus
The present invention has been conceived based on consideration of the above circumstances. An object of the present invention is therefore to obviate the conveyance of ...
|
|
|
Active Solid-state 
