Home | Links | Contact Us | More About Intellectual Property | Bookmark
Search patents:
Home Active Solid-state Nonvolatile-memory-device

 Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
We claim: 1. A method of forming a bipolar transistor with a predetermined gain and having a low ...


 Method of forming a carbon film on a substrate made of an oxide material
An object of the present invention is to provide, with due consideration to the drawbacks of such ...


 Method for producing a fully walled emitter-base structure in a bipolar transistor
An object of the present invention is to provide a process for producing a bipolar transistor ...


 Rare earth slab doping of group III-V compounds
It is an object of this invention to provide a semiconductor film having a high carrier mobility ...


 Superconducting thin film
What is claimed is: 1. A superconducting thin film of a compound oxide represented by YBa.sub.2 Cu....


 Process of fabricating a semiconductor substrate
An object of the present invention is to provide a substrate of good film thickness distribution ...


 Thin film solar cell and production method therefor
An object of the present invention is to provide an inexpensive thin film solar cell with high ...


 Soluble precursor to poly (cyanoterephthalydene) and method of preparation
The above described problems and others are substantially solved and the above purposes and others ...


 Complementary junction heterostructure field-effect transistor
It is a primary object of the present invention to obviate the problems of the prior art ...


 Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
It is, therefore, an object of this invention to provide a magnetic field sensor of an indium ...


 Nonvolatile memory device

Details
Inventors: Kang, Hee Bok; Park, Young Jin;
Assignee: Hynix Semiconductor, Inc. (Gyeonggi-do, KR)
Primary Examiner: Dinh; Son T.
Assistant Examiner:
Attorney, Agent or Firm: Heller Ehrman White and McAuliffe LLP

The present invention relates to a nonvolatile memory device, and more specifically, to a programmable nonvolatile logic switch memory (register) device using a resistive memory device. The programmable nonvolatile register uses a logic switch or a nonvolatile resistive memory device whose resistive state can be set by flowing a controlled current through it.

DETAILED DESCRIPTION Accordingly, it is an object of the present invention to provide a programmable nonvolatile logic switch memory (register) device using a nonvolatile resistance memory device.
In an embodiment, there is provided a nonvolatile memory device comprising a write/read controller, a nonvolatile resistive memory device and a logic switch.
The write/read controller selectively controls write/read control signals enabled in a write mode.
As used herein, a nonvolatile resistive memory device is a circuit element that stores different logic values in the level of electrical resistance of one or more circuit elements, such that the states of resistance of the element or elements can be changed or set (e.
g.
, set to a high resistance or set to a low resistance) by controlling the amount of current that passes through the device when the write/read control signals are enabled.
The logic switch selects switching states depending on the different logic values pre-stored in the nonvolatile resistive memory device when the write/read control signals are disabled.
In an embodiment, there is also provided a nonvolatile memory device comprising a flip-flop unit, a nonvolatile resistive memory device, an access controller and a current supply unit.
The flip-flop unit includes a PMOS latch and a NMOS latch, and latch the opposite data.
The nonvolatile resistive memory device, which is connected between the PMOS latch and the NMOS latch, stores different logic values depending on states of resistance changed by the amount of current.
The access controller controls connection of a bitline and the flip-flop unit depending on an enable state of a wordline.
The current supply unit supplies current for changing data stored in the resistive memory device when the write/read control signals are enabled.
In an embodiment, there is also provided a nonvolatile memory device comprising a flip-flop unit, a nonvolatile resistive memory device and an access controller.
The flip-flop unit includes a NMOS latch for latching opposite data



Related patents
  Device and method for pulse width control in a phase change memory device
The invention is directed to an approach to programming phase-change memory devices, such as chalcogenide memory (PRAM). The invention is directed to an approach to ...
  Tunnel diode load for ultra-fast low power switching circuits
The key element of my invention is the use of a tunnel diode for rapid discharging of a capacitor in a switching circuit. The tunnel diode has a low resistance in the ...
  Flat bed scanner system and method
A flat bed scanner system and method of scanning a planar transparent member carrying an original image with a beam of white light to produce digital data representing ...
  Vibratory transducer
OF THE PREFERRED EMBODIMENTS Turning now to FIGS. 4-7, which depicts a first illustrative embodiment of the invention, there is depicted a single silicon crystal 30 of ...
  Method of forming single crystalline magnesia spinel film
The present invention has been achieved in order to solve the above described problem. For a method of forming a single crystalline magnesia spinel film of the present ...
  Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
The present invention has an object to eliminate the conventional drawbacks described above, and has as its object to provide a method of manufacturing a thin film of a ...
  Method of epitaxially growing compound semiconductor materials
The present invention is concerned with the epitaxial growth of semiconductor materials on substrates of essentially single crystal semiconducting or insulating ...
  Manufacture of monolithic infrared focal plane arrays
We claim: 1. A monolithic focal plane array structure including interconnected silicon circuitry and HgCdTe detectors, comprising: (a) a silicon substrate having silicon ...
  Optoelectronic interconnections for integrated circuits
The present invention relates to an integrated circuit which includes a body of a semiconductor material having electrical components therein and electrically connected ...
  Large array MMIC feedthrough
What we claim as our invention is: 1. A backplate apparatus for use with an array of monolithic microwave integrated circuits, comprising: a plurality of electrically ...

0.014

Archive: All patents - Links

Copyright (c)2006 Eipa-patents.org - All rights reserved