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Oriented conductive film and process for preparing the same

Details

Inventors: Nashimoto, Keiichi;
Assignee: Fuji Xerox Co., Ltd. (Tokyo, JP)
Primary Examiner: Utech; Benjamin
Assistant Examiner:
Attorney, Agent or Firm: Oliff & Berridge

An oriented conductive thin film useful as a thin film electrode or a thin film resistor is disclosed, comprising an epitaxial or oriented ABO.sub.3 type oxide (e.g., BaPbO.sub.3) conductive thin film which is obtained by coating a single crystal oxide substrate or a single crystal semiconductor substrate with a solution of a metal oxide precursor comprising an organometallic compound, thermally decomposing the coating layer, followed by annealing. An epitaxial or oriented ABO.sub.3 type ferroelectric thin film may further be provided on the conductive thin film.

DETAILED DESCRIPTION An object of the present invention is to provide an epitaxial or oriented conductive thin film of an oxide prepared from an organometallic compound, which is useful as a thin film oxide electrode or a thin film oxide resistor.
Another object of the present invention is to provide a process for producing the above-mentioned epitaxial or oriented conductive thin film.
According to the present invention, a conductive substrate of a ferroelectric substance, a semiconductor, etc.
for thin film growth is obtained at low cost.
As a result of investigations into an oriented conductive thin film, the present inventors have found that an epitaxial or oriented conductive oxide film obtained by starting with organometallic compounds has a lattice constant and a crystal structure close to those of many ferroelectric substances and thus completed the present invention.
The present invention relates to an epitaxial or oriented conductive thin film of an ABO.
sub.
3 type metal oxide which is formed on a single crystal substrate by applying a solution of a organometallic compound on the single crystal substrate to form a thin film, thermally decomposing the precursor, followed by annealing.

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