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Oriented ferroelectric thin film element
| Details |
Inventors: Nashimoto, Keiichi;
Assignee: Fuji Xerox Co., Ltd. (Tokyo, JP)
Primary Examiner: Krynski; William
Assistant Examiner:
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
An oriented ferroelectric thin film element has a structure in which an epitaxial or oriented buffer thin film is formed on a semiconductor single crystal substrate, an epitaxial or oriented metallic thin film is formed on the buffer thin film, and an epitaxial or oriented ferroelectric thin film is further formed on the metallic thin film. The semiconductor single crystal substrate may be made of Si or GaAs, the buffer thin film may be made of MgO or MgAl.sub.2 O.sub.4, the metallic thin film may be made of Pd, Pt, Al, Au, or Ag, and the ferroelectric thin film has an ABO.sub.3 perovskite crystal structure. |
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DETAILED DESCRIPTION The present invention has been completed under the above circumstance in the conventional technique.
An object of the present invention is to provide an oriented ferroelectric thin film element with a metallic thin film on a semiconductor substrate.
As a result of further studies by the inventor, it was found that if a buffer thin film of epitaxial or oriented MgO or MgAl.
sub.
2 O.
sub.
4 is formed on a semiconductor single crystal substrate, metal such as Pd, Pt, Al, Au and Ag can be formed with its epitaxy or orientation on the buffer thin film, and the present invention was completed.
The oriented ferroelectric thin film element according to the present invention is, therefore, characterized in that an epitaxial or orrented buffer thin film is formed on a semiconductor single crystal substrate, an epitaxial or oriented metallic thin film is formed on the buffer thin film and an epitaxial or oriented ferroelectric thin film is further formed on the metallic thin film.
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Active Solid-state 
