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Oxide thin film, electronic device substrate and electronic device
| Details |
Inventors: Yano, Yoshihiko; Noguchi, Takao;
Assignee: TDK Corporation (Tokyo, JP)
Primary Examiner: Tran; Minh-Loan
Assistant Examiner:
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained. |
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DETAILED DESCRIPTION We claim: 1.
An oxide thin film in the form of a unidirectionally oriented epitaxial film consisting essentially of zirconium oxide formed on a single crystal substrate of silicon wherein said unidirectionally oriented epitaxial film contains at least 95% of Zr based on the amount of only constituent elements of the film excluding oxygen, a rocking curve of reflection on a (002) or (111) plane of said unidirectionally oriented epitaxial film has a half-value width of up to 1.
5.
degree.
, and said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
2.
The oxide thin film of claim 1 wherein said unidirectionally oriented epitaxial film contains at least 98% of Zr based on the amount of only constituent elements of the film excluding oxygen.
3.
The oxide thin film of claim 1 wherein said unidirectionally oriented epitaxial film has a ten point mean roughness Rz of up to 0.
60 nm across a reference length of 500 nm over at least 80% of its surface.
4.
The oxide thin film of claim 1 wherein said single crystal silicon substrate is a surface treated silicon substrate whose surface has a 1.
times.
1 surface structure formed of metallic zirconium, silicon and oxygen.
5.
The oxide thin film of claim 1 wherein said single crystal substrate is a silicon single crystal whose (100) or (111) plane is made the substrate surface.
6.
The oxide thin film of claim 1 which has an area of at least 10 square centimeter.
7.
The oxide thin film of any one of claims 1 to 6 which has an area of at least 10 square centimeter.
8.
An oxide thin film in the form of a unidirectionally oriented epitaxial film of the composition: Zr.
sub.
1-x R.
sub.
x O.
sub.
2-.
delta.
wherein R is a rare earth metal inclusive of yttrium, x is a number of 0 to 0.
75, and .
delta.
is a number of 0 to 0.
5, formed on a single crystal silicon substrate wherein a rocking curve of reflection on a (002) or (111) plane of said film has a half-value width of up to 1
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Active Solid-state 
