Method of preparing InSb thin film
An object of the present invention is to provide a method of preparing an InSb thin film, which can form an InSb thin film having high mobility on a surface of the aforementioned general substrate. Th... Read More
Inventors: Takeda, Toshikazu; Ogiso, Yoshifumi; Nakagawa, Takuji; Senda, Atsuo;, Assignee: Murata Manufacturing Co., Ltd. (JP) |
Organometallic fluorescent complex polymers for light emitting applications
The above described problems and others are at least partially solved and the above purposes are realized by a method for the preparation of a fluorescent complex polymer including the step of connect... Read More
Inventors: Shi, Song Q.; So, Franky;, Assignee: Motorola (Schaumburg, IL) |
Method and apparatus for manufacturing semi-insulation GaAs monocrystal
Accordingly, it is the object of the present invention to provide a method of manufacturing a semi-insulation GaAs monocrystal by controlling carbon concentration during crystal growth by a simple met... Read More
Inventors: Yamashita, Youji;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Semiconductor luminous element with light reflection and focusing configuration
OF THE INVENTION FIG. 1 (a) shows a cross section of semiconductor luminous element A, a surface-emitting element which is a first preferred embodiment of this invention. Luminous element A consists ... Read More
Inventors: Yanagase, Masashi; Watanabe, Hideaki; Imamaka, Koichi;, Assignee: Omron Corporation (JP) |
Hydro-air renewable power system
To achieve the foregoing and other objects, and in accordance with the purposes of the present invention, as embodied and broadly described herein, the apparatus of this invention may comprise a power... Read More
Inventors: Prueitt, Melvin L.;, Assignee: |
Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
As used herein, the term "high-dielectric-constant" means a dielectric constant greater than about 50 at device operating temperature. As used herein the term "perovskite" means a material with a pero... Read More
Inventors: Summerfelt, Scott R.; Beratan, Howard R.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Nitride based semiconductor device and manufacture thereof
It is an object of the present invention to address the above problems and provide a nitride semiconductor device, in particular a semiconductor light emitting device having good properties in the ult... Read More
Inventors: Imai, Hideaki; Miyata, Kunio; Hirai, Tadahiko;, Assignee: Asahi Kasei Kogyo Kabushiki Kaisha (Osaka, JP) |
Evanescent scanning of biochemical array
OF THE INVENTION This invention provides apparatuses and methods for high-contrast scanning of (or detection of light from) a chemical (e.g., a polymer) array. Evanescent excitation is utilized to ge... Read More
Inventors: King, David A.; Seher, Jens-Peter;, Assignee: Hewlett-Packard Company (Palo Alto, CA) |
Oriented conductive film and process for preparing the same
An object of the present invention is to provide an epitaxial or oriented conductive thin film of an oxide prepared from an organometallic compound, which is useful as a thin film oxide electrode or a... Read More
Inventors: Nashimoto, Keiichi;, Assignee: Fuji Xerox Co., Ltd. (Tokyo, JP) |
Superconductor
The superconductor according to this invention comprises an oxide film deposited on a metal film formed on a substrate, these oxide containing A, B and Cu and being a ternary (three-element) or quater... Read More
Inventors: Hatta, Shinichiro; Higashino, Hidetaka; Hirochi, Kumiko; Adachi, Hideaki;, Assignee: |
Method of making barium strontium titanate (BST) thin film by erbium donor doping
The present invention relates to a method of producing and a structure containing barium and/or strontium titanate dielectric films (hereafter referred to as BST) with improved properties. Although BS... Read More
Inventors: Tsu, Robert; Kulwicki, Bernard M.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Volume control module for use in diving
It is therefore a primary object of the present invention to provide a volume control device for use in diving which enables a diver to control his or her buoyancy automatically. It is another object ... Read More
Inventors: Leonard, Kenneth J.;, Assignee: |
Oriented ferroelectric thin film element
The present invention has been completed under the above circumstance in the conventional technique. An object of the present invention is to provide an oriented ferroelectric thin film element with a... Read More
Inventors: Nashimoto, Keiichi;, Assignee: Fuji Xerox Co., Ltd. (Tokyo, JP) |
Method of packaging integrated circuits
The above and other objects are met by a method of assembling a flip chip in a package. Solder bumps are attached to a first flip chip and to a second flip chip. A package substrate having first and s... Read More
Inventors: Barber, Ivor G.;, Assignee: LSI Logic Corporation (Milpitas, CA) |
Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
A Ge buffer layer directly or indirectly on Si oxidizes much less readily and can be used to prevent or minimize the formation of the low dielectric constant layer. An epitaxial Ge layer on Si provide... Read More
Inventors: Summerfelt, Scott R.;, Assignee: Texas Instruments Incorporated (Dallas, TX) |
Oxide thin film, electronic device substrate and electronic device
We claim: 1. An oxide thin film in the form of a unidirectionally oriented epitaxial film consisting essentially of zirconium oxide formed on a single crystal substrate of silicon wherein said unidire... Read More
Inventors: Yano, Yoshihiko; Noguchi, Takao;, Assignee: TDK Corporation (Tokyo, JP) |
Laser based PCMCIA data collection system with automatic triggering for portable applications and method of use
1. Objects of the Invention It is a general object of this invention to provide moving light beam non-contact bar-code scan heads with light collectors and circuitry integrated with data collection se... Read More
Inventors: Plesko, George A.;, Assignee: GEO Labs, Inc. (Media, PA) |
Method of forming a silicon nitride layer
The above problems and others are at least partially solved and the above purposes and others are realized in a method of forming a silicon nitride layer or film on a semiconductor wafer structure inc... Read More
Inventors: Droopad, Ravi; Abrokwah, Jonathan K.; Passlack, Matthias; Yu, Zhiyi Jimmy;, Assignee: Motorola,Inc. (Schaumburg, IL) |
Optical attenuator using polarization modulation and a feedback controller
The present invention provides an optical power regulator that employs a variable optical attenuator with a feedback controller. A first birefringent element spatially separates the input optical beam... Read More
Inventors: Wu, Kuang-Yi; Liu, Jian-Yu; Chen, Yen-Chen;, Assignee: Chorum Technologies Inc. (Richardson, TX) |
Wavelength insensitive passive polarization converter employing electro-optic polymer waveguides
OF THE INVENTION A passive polarization converter of present invention is equipped with poling electrodes at top and bottom of a planar waveguide consisting of three layers of electro-optic polymer, ... Read More
Inventors: Shin, Sang-Yung; Oh, Min-Cheol;, Assignee: Korea Advanced Institute of Science and Technology (Taejon, KR) |
Enhanced protective lens cover for an infrared thermometer
OF THE INVENTION First briefly in overview, the present invention is directed to novel probe cover configurations engineered for enhanced use with clinical thermometers applying infrared temperature ... Read More
Inventors: Fraden, Jacob; Brown, Joseph P.; Lackey, Robert P.; Howe, Randall R.; Bultges, Heinz; Debus, Wolfram; Bautz, Gunther; Franke, Helmut;, Assignee: Braun Thermoscan (San Diego, CA) |
Lead silicate based capacitor structures
In accordance with the present invention, a capacitor and method for making such a capacitor for dynamic random access memories and other applications is provided comprising a lower electrode of Si, S... Read More
Inventors: Laibowitz, Robert Benjamin; Shaw, Thomas McCarroll;, Assignee: International Business Machines Corporation (Armonk, NY) |
Piezoelectric resonators on a differentially offset reflector
The present invention fabricates a plurality of resonators upon a single substrate, which resonators are supported upon the substrate by one or more intervening layers of material. The resonant freque... Read More
Inventors: Lakin, Kenneth Meade;, Assignee: TFR Technologies, Inc. (Bend, OR) |
Method for the transfer of thin layers monocrystalline material onto a desirable substrate
The present invention relates to a method for the transfer of a thin monocrystalline layer from an essentially flat and mirror polished first substrate onto an essentially flat and mirror polished sec... Read More
Inventors: Goesele, Ulrich M.; Tong, Qin-Yi;, Assignee: Max Planck Society (Munich, DE) |
Transmit/receive compensation
The invention disclosed herein is a new technique to make the most efficient use of the scarce spectral bandwidth. In a time division duplex (TDD) system, compensation measurements are made for the tr... Read More
Inventors: Hoole, Elliott D.;, Assignee: AT&T Wireless Svcs. Inc. (Redmond, WA) |
Selective hemispherical grain silicon deposition
A primary goal of the invention is to provide one or more approaches to improving the robustness of a selective HSG process with regard to changes in the reactor ambient and substrate condition. Anoth... Read More
Inventors: Gilboa, Yitzhak Eric; Brosilow, Benjamin; Levy, Sagy; Spielberg, Hedvi; Bransky, Itai;, Assignee: AG Associates (Israel) Ltd. (IL) |
Tunable dielectric constant oxide and method of manufacture
A method for manufacturing a semiconductor device is shown in which a silicon oxide film acts as an insulating film for electrically isolating conductive layers included in the semiconductor device. A... Read More
Inventors: Allman, Derryl D. J.; Kwong, Dim Lee;, Assignee: LSI Logic Corporation (Milpitas, CA) |
Silicon-based functional matrix substrate and optical integrated oxide device
It is therefore an object of the invention to provide a silicon-based functional matrix substrate for integrating thereon an oxide device, such as oxide optical device, ferroelectric nonvolatile memor... Read More
Inventors: Suzuki, Masayuki;, Assignee: Sony Corporation (Tokyo, JP) |
Photovoltaic device and process for producing the same
Under these circumstances, an object of the present invention is to provide a photovoltaic device having a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-... Read More
Inventors: Kishimoto, Katsushi; Nakano, Takanori; Sannomiya, Hitoshi; Nomoto, Katsuhiko;, Assignee: Sharp Kabushiki Kaisha (Osaka, JP) |
GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
An object of this invention is to provide a GaN crystal film and a group III element nitride semiconductor wafer with reduced strain, defects, dislocations and cracks even with a large thickness, even... Read More
Inventors: Usui, Akira; Sakai, Akira; Sunakawa, Haruo; Mizuta, Masashi; Matsumoto, Yoshishige;, Assignee: NEC Corporation (Tokyo, JP) |
Active Solid-state 
