Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects
Based on the foregoing, a fabrication method for an oxide layer is provided, wherein a succession of annealing processes is conducted to improve the quality of the oxide layer. A low concentration of ... Read More
Inventors: Lee, Ming-Tsan; Liu, Chuan H.; Fu, Kuan-Yu;, Assignee: United Microelectronics Corp. (Hsinchu, TW) |
Floating gate transistor having buried strained silicon germanium channel layer
In accordance with the invention, a field effect transistor comprises a semiconductor body having source and drain regions formed in spaced surface regions of the semiconductor. A channel region betwe... Read More
Inventors: Kencke, David L.; Banerjee, Sanjay K.;, Assignee: Board of Regents, The University of Texas System (Austin, TX) |
High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
There is provided, in accordance with the invention, an LED component, for light of a wavelength in the green-to-near UV wavelength range, approximately 570 to 350 nm. The light-emitting semiconductor... Read More
Inventors: Carey, Julian A.; Collins, III, Williams David; Posselt, Jason L.;, Assignee: Lumileds Lighting, U.S., LLC (San Jose, CA) |
Method for forming gate
Accordingly the present invention is to provide a method for forming a gate that improves the quality of the gate, wherein the oxidation of the silicide layer and the diffusion of the metallic impurit... Read More
Inventors: Yeh, Wen-Kuan; Lin, Tony; Chou, Jih-Wen;, Assignee: United Microelectronics Corp. (Hsinchu, TW) |
Method of marking and detecting disc index
The present invention allows placement of at least one disc at an angular orientation by marking the disc with an index mark or feature that can be detected, such as for placement in a servo track wri... Read More
Inventors: Pfeiffer, Michael William; Stirn, James John; Goodrich, Richard Gordon;, Assignee: Seagate Technology LLC (Scotts Valley, CA) |
Semiconductor memory device
It is accordingly an object of the invention to provide a semiconductor memory configuration and a DRAM configuration which overcome the above-mentioned disadvantages of the prior art apparatus of thi... Read More
Inventors: Hoffmann, Kurt; Kowarik, Oskar;, Assignee: Infineon Technologies AG (Munich, DE) |
Gas sensor
The present invention has been made with a view to obviating the above-mentioned problems involved in the conventional gas sensor. It is therefore a first consideration of the present invention to pro... Read More
Inventors: Ito, Kentaro; Kubo, Tetsuya; Yamauchi, Yukio;, Assignee: Hochiki Corporation (Tokyo, JP) |
Chemical sensor
What is claimed is: 1. A sensor for detecting a chemical substance comprising an insertion element comprising a compound selected from the group consisting of IRO.sub.2 and HfS.sub.2 having a structur... Read More
Inventors: Rauh, R. David;, Assignee: EIC Laboratories, Inc. (Norwood, MA) |
PDTI metal alloy as a hydrogen or hydrocarbon sensitive metal
What is claimed is: 1. A hydrogen sensitive PdTi metal alloy, wherein said alloy has been annealed at approximately 295.degree. C. for at least 4 hours, consisting essentially of: between 71 and 99 at... Read More
Inventors: Hunter, Gary W.;, Assignee: The United States of America as represented by the Administrator of the (Washington, DC) |
Hydrogen sensor
This invention provides a thin film hydrogen-sensing device that is effective at temperatures from normal room temperature to at least 150.degree. C. Furthermore, it provides a fast response time of l... Read More
Inventors: Cheng, Yang-Tse; Li, Yang; Lisi, Daniel John; Gutowski, Stanley; Poli, Andrea A.;, Assignee: General Motors Corporation (Detroit, MI) |
Rod bending system
OF AN ILLUSTRATIVE EMBODIMENT Referring now to FIG. 1, a handle 10 holds a template rod 12 and an implant rod 14 in close proximity and in a fixed orientation relative to one another. Screws 16 and 1... Read More
Inventors: Holmes, Russell P.;, Assignee: Hol-Med Corporation (Easton, MA) |
Semiconductor memory device having bidirectional potential barrier switching element
It is an object of the present invention to provide a semiconductor memory device which solves the above-described problem that the conventional DRAM has, and achieves a high degree of integration by ... Read More
Inventors: Yamada, Takashi; Watanabe, Yohji;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Transistorless, multistable current-mode memory cells and memory arrays and methods of reading and writing to the same
The present invention provides transistorless memory cells that store information as one of two possible bistable current states. A transistorless memory cell comprises (i) at least one first transist... Read More
Inventors: Levy, Harold J.; McGill, Thomas C.;, Assignee: California Institute of Technology (Pasadena, CA) |
Conformal thin films over textured capacitor electrodes
In satisfaction of this need, methods are provided herein for depositing dielectric and top electrode materials over textured bottom electrode surfaces. Advantageously, the methods attain high conform... Read More
Inventors: Raaijmakers, Ivo; Haukka, Suvi P.; Granneman, Ernst H. A.;, Assignee: ASM International N.V. (NL) |
Horizontal type ferroelectric memory and manufacturing method of the same
OF THE INVENTION Now, various embodiments of this invention will be explained with reference to drawings. FIGS. 1A to 1C show the structure of a series connected TC unit type ferroelectric RAM repres... Read More
Inventors: Morimoto, Toyota;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Dual band QWIP focal plane array
FIG. 3A shows the structure of the preferred bound-to-quasibound QWIP of this embodiment and FIG. 3B shows the layers forming the device. Bottom contact layer 300 and top contact layer 302 form the t... Read More
Inventors: Gunapala, Sarath D.; Choi, Kwong Kit; Bandara, Sumith V.;, Assignee: California Institute of Technology (Pasadena, CA) |
Structure of chalcogenide memory element
OF THE DISCLOSURE FIG. 1 is a simplified schematic diagram of an embodiment of a cross-point memory array 10 in which the disclosed memory cell structures can be utilized. The memory arrangement 10 i... Read More
Inventors: Fricke, Peter; Koll, Andrew; Van Brocklin, Andrew L.;, Assignee: Hewlett-Packard Development Company, L.P. (Houston, TX) |
Line light source system
In view of the foregoing observations and description, the primary object of the present invention is to provide a line light source system which can correctly focus substantially all the light bundle... Read More
Inventors: Hakamata, Kazuo;, Assignee: Fuji Photo Film Co., Ltd. (Kanagawa-ken, JP) |
Method for semiconductor wafer planarization by CMP stop layer formation
The invention claimed is: 1. A method of manufacturing an integrated circuit wafer comprising: depositing a chemical-mechanical polishing stop layer on a semiconductor wafer; processing a first photor... Read More
Inventors: Sahota, Kashmir S.; Erhardt, Jeffrey P.; Halliyal, Arvind; Ngo, Minh Van; Achuthan, Krishnashree;, Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA) |
Electric field emitter device for electrostatic discharge protection of integrated circuits
It is an aspect of the present invention to provide a method and apparatus for discharging a high voltage from an input pad of an integrated circuit. It is another aspect of the invention to discharge... Read More
Inventors: Leary, David J.;, Assignee: Hewlett-Packard Company (Palo Alto, CA) |
ESD protection for submicron CMOS circuits
OF THE DRAWINGS An ESD protection device for the pads of an integrated circuit ("IC") is disclosed. While the following description makes reference to semiconductor materials of a certain type, e.g. ... Read More
Inventors: Worley, Eugene R.; Jones, Addison B.; Gupta, Rajiv;, Assignee: Rockwell International Corporation (Seal Beach, CA) |
Voltage-protected semiconductor bridge igniter elements
Generally, the present invention provides a semiconductor bridge (SCB) igniter element having integral high voltage protection and, optionally, DC current continuity monitoring capability. Such integr... Read More
Inventors: Martinez-Tovar, Bernardo; Foster, Martin C.;, Assignee: The Ensign-Bickford Company (Simsbury, CT) |
Method and apparatus for lamp control
OF THE PREFERRED EMBODIMENTS The preferred embodiment of the present invention will now be described in more detail with reference to the accompanying drawings. In this embodiment, the present invent... Read More
Inventors: Stanton, Douglas A.;, Assignee: Philips Electronics North America Corporation (New York, NY) |
MRAM having memory cell array in which cross-point memory cells are arranged by hierarchical bit line scheme and data read method thereof
OF THE INVENTION [First Embodiment] FIG. 1 is a block diagram showing the main part of a magnetic random access memory (MRAM) according to the first embodiment of the present invention. The present i... Read More
Inventors: Tsuchida, Kenji; Iwata, Yoshihisa; Higashi, Tomoki;, Assignee: Kabushiki Kaisha Toshiba (Tokyo, JP) |
Monolithic faraday optical switch
OF THE INVENTION The monolithic optical switch of FIG. 1 includes an optically inactive substrate 1. Substrate 1 is preferably a single crystal substrate of gadolinium gallium garnet although other m... Read More
Inventors: Glasheen, William M.;, Assignee: General Electric Company (Schenectady, NY) |
Electrochromic layer-set
OF THE DRAWING The sequence of layers of the electrochromic layer-set (mirror) shown in the figure corresponds to the above discussed sequence of layers already referred to when describing the prior ... Read More
Inventors: Baucke, Friedrich G. K.; Braun, Jutta; Metz, Bernd;, Assignee: Schott Glaswerke (Mainz, DE) |
Cylindrical body inspection apparatus utilizing displacement information and reflected light information
In consideration of the aforementioned circumstances, it is an object of the present invention to provide an inspection apparatus which is capable of determining the presence or absence of surface def... Read More
Inventors: Yaginuma, Yoshitaka;, Assignee: Mitsubishi Nuclear Fuel Co. (Tokyo, JP) |
Optical switching device comprising switchable hydrides
It is an object of the present invention to provide, inter alia, an optical switching device in which the switching film can be reversibly converted from a nontransparent or mirror-like state into a t... Read More
Inventors: Van Der Sluis, Paul; Ouwerkerk, Martin; Duine, Peter A.;, Assignee: U.S. Philips Corporation (New York, NY) |
Optical switching device
What is claimed is: 1. An optical switching device comprising a substrate and a switching film which comprises a hydride of a trivalent metal, which hydride can be reversibly switched between a low-hy... Read More
Inventors: Duine, Peter Alexander; Van Der Sluis, Paul;, Assignee: U.S. Philips Corporation (New York, NY) |
Bi-directional, single material thermal actuator
One aspect of this invention provides a thermal actuator that can apply force to an object in two directions without using two different materials having different coefficients of thermal expansion. A... Read More
Inventors: Hanson, Heather Shannon; Mitchell, Joseph Nathan;, Assignee: Southwest Research Institute (San Antonio, TX) |
Active Solid-state 
