Three-dimensional optical memory medium and process for producing same
It is therefore an object of the present invention to provide a three-dimensional optical memory medium that is improved in three-dimensional reading accuracy. It is another object of the present inve... Read More
Inventors: Miura, Kiyotaka; Fujiwara, Seiji;, Assignee: Central Glass Company, Limited (Yamaguchi, JP) |
Micro electro mechanical system display cell and method for fabricating thereof
Accordingly, an objective of the present invention is to provide a micro electro mechanical system display cell using a mode of optical interference display that can prevent light leakage when the dis... Read More
Inventors: Tsai, Hsiung-Kuang; Lin, Wen-Jian;, Assignee: Prime View International Co., Ltd (Hsinchu, TW) |
Core-in-shell sorbent for hot coal gas desulfurization
An object of the invention is to provide a sorbent which has improved physical characteristics for use in harsh conditions. Another object of the invention is to provide a sorbent that is regenerable.... Read More
Inventors: Wheelock, Thomas D.; Akiti, Jr., Tetteh T.;, Assignee: Iowa State University Research Foundation, Inc. (Ames, IA) |
Photon source and method of its fabrication and operation
What is claimed is: 1. A photon source comprising: a photon source body including, a plurality of quantum dots, a non-insulating layer overlying and in contact with the plurality of quantum dots, and ... Read More
Inventors: Shields, Andrew James; Stevenson, Richard Mark; Kardynal, Beata Ewa; Yuan, Zhiliang;, Assignee: Kabushiki Kaisha Toshiba (Tokyo, JP) |
Magnetic memory unit and magnetic memory array
The invention is based on the problem of providing a nonvolatile magnetic memory unit in which a shortened access time is combined with a high retention time and a high integration density. The proble... Read More
Inventors: Honlein, Wolfgang; Kreupl, Franz;, Assignee: Infineon Technologies AG (Munich, DE) |
Negative differential resistance (NDR) element and memory with reduced soft error rate
An object of the present invention is to provide a memory device such as a static random access memory (SRAM) cell which utilizes NDR FETs, and which has improved soft error rate (SER) performance. A ... Read More
Inventors: King, Tsu-Jae;, Assignee: Progressant Technologies, Inc. (Fremont, CA) |
Multilayer photoconductive material
OF THE INVENTION It is well known that, although the material withs narrow optical band gap generally absorbes light with a long wavelength, it has small resistance at dark so that, on one hand, its ... Read More
Inventors: Shimizu, Isamu; Yamaguchi, Minori;, Assignee: Kanegafuchi Chemical Industry Co., Ltd. (Osaka, JP) |
Multiple cell photoresponsive amorphous photo voltaic devices including graded band gaps
What is claimed and desired to be secured by Letters Patent of the United States is: 1. An improved photoresponsive tandem multiple cell device, said device comprising: at least first and second super... Read More
Inventors: Ovshinsky, Stanford R.; Adler, David;, Assignee: Energy Conversion Devices, Inc. (Troy, MI) |
Metal-encapsulated quantum wire for enhanced charge transport
OF THE PREFERRED EMBODIMENT According to the invention there is further provided a region of metal encapsulation around the lateral surfaces of the charge transporting quantum wire. Such regions of m... Read More
Inventors: Dutta, Mitra; Grubin, Harold L.; Iafrate, Gerald J.; Kim, Ki Wook; Stroscio, Michael A.;, Assignee: The United States of America as represented by the Secretary of the Army (Washington, DC) |
Method for constructing devices with a storage action and having amorphous semiconductors
The present invention aims at obviating these disadvantages and more particularly at making it possible to construct semiconductor devices, whose electrodes are well suited to the storage action and i... Read More
Inventors: Kumurdjian, Pierre;, Assignee: Commissariat a l'Energie Atomique (Paris, FR) |
Extrinsic infrared detector with dopant site charge-neutralization
What is claimed is: 1. A monolithic infrared detector comprising: a substrate formed from a substrate of semiconductive material, said substrate being of a first conductivity type; a detector area at ... Read More
Inventors: Levine, Michael A.;, Assignee: |
Antifuse development using .alpha.-c:h,n,f thin films
OF THE PREFERRED EMBODIMENTS The numerous innovative teachings of the present application will be described with particular reference to the presently preferred embodiment (by way of example, and not... Read More
Inventors: Gangopadhyay, Shubhra;, Assignee: |
Method and apparatus for electronically controlled scanning of micro-area devices
One aspect of the present invention is to provide an excitation source which may be used, for example, in conjunction with the scanning of micro-area devices. The excitation source is comprised of a s... Read More
Inventors: Landers, James P.; Huang, Zhili; Huhmer, Andreas;, Assignee: University of Pittsburgh (Pittsburgh, PA) |
Submersible light-directing member for material excitation in microfluidic devices
The present invention includes light-directing hardware, microfluidic devices adapted for use with the same, and combinations thereof. In one variation of the present invention, a light-directing memb... Read More
Inventors: Bjornson, Torleif O.; Maher, Kevin; Gluszcak, Michael Robert;, Assignee: Aclara Biosciences, Inc. (Mountain View, CA) |
Si/C superlattice useful for semiconductor devices
The invention provides a Si/C superlattice useful for semiconductor devices, comprising a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces... Read More
Inventors: Wang, Chia Gee; Tsu, Raphael;, Assignee: Nanodynamics, Inc. (New York, NY) |
Ink-jet recording apparatus
Accordingly, it is the object of the present invention to provide an ink-jet recording apparatus which can eliminate wear of a thermal head and achieve high-quality recording. In order to achieve the ... Read More
Inventors: Suzuki, Yuji; Hattori, Syunsuke;, Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Recording and reproducing apparatus and method for applying a pulse voltage and an electromagnetic wave
The object of the present invention is to 1 provide a recording-reproducing apparatus satisfactory in reproductivity and stability of recording, and has a large recording capacity, and also to provide... Read More
Inventors: Kawada, Haruki; Matsuda, Hiroshi; Takimoto, Kiyoshi; Nose, Hiroyasu;, Assignee: Canon Kabushiki Kaisha (Tokyo, JP) |
Substrates carrying polymers of linked sandwich coordination compounds and methods of use thereof
The present invention provides a polymer comprising or consisting of a plurality of covalently joined monomeric units, the monomeric units comprising sandwich coordination compounds. The covalently jo... Read More
Inventors: Li, Junzhong; Gryko, Dorota; Lindsey, Jonathan S.;, Assignee: North Carolina State University (Raleigh, NC) |
Polythiophene dispersions, their production and their use
We claim: 1. A solution of a polythiophene comprising water or a mixture of water with a water-miscible organic solvent as the dispersing medium, a polythiophene made up of structural units of the for... Read More
Inventors: Jonas, Friedrich; Krafft, Werner;, Assignee: Bayer Aktiengesellschaft (Leverkusen, DE) |
Method of manufacture of polymer transistors with controllable gap
In accordance with one aspect of the invention, in a preferred embodiment, there is provided a method of manufacturing a polymer transistor. The method has the steps of positioning a conducting tip pr... Read More
Inventors: Madden, Peter; Madden, John; Hunter, Ian W.;, Assignee: Massachusetts Institute of Technology (Cambridge, MA) |
Surge arrester
An object of my invention is to provide a reinforced central core unit for a surge arrester which will minimize fragmentation of the core when the surge arrester is subjected to abnormally high voltag... Read More
Inventors: Nedriga, Walter N.;, Assignee: |
Self-aligned process for gated field emitters
In accordance with the present invention, a method of forming a self-aligned gated field emitter with substantial manufacturing advantages is described. There is provided a substrate having at its sur... Read More
Inventors: Liu, David Nan-Chou;, Assignee: Industrial Technology Research Institute (Hsinchu, TW) |
Ultra-high density storage device
The present invention is a ultra-high density storage device. In addition, the present invention has fast access times and high data rates. The invented storage device is based on a technology differe... Read More
Inventors: Gibson, Gary; Kamins, Theodore I.; Keshner, Marvin S.; Neberhuis, Steven L.; Perlov, Craig M.; Yang, Chung C.;, Assignee: |
Method for writing a pattern using multiple variable shaped electron beams
The invention relates to a method of writing a pattern on a workpiece by means of a number of modules containing separately controllable miniature shaped-beam e-beam systems writing in parallel on a w... Read More
Inventors: Groves, Timothy R.; Kendall, Rodney A.;, Assignee: International Business Machines Corporation (Armonk, NY) |
Method and apparatus for adjustment of fed image
The present invention is a low cost system and method for making adjustments to the pixel boundaries of images in a screen display of an FED to overcome the problems created by pixel separation which ... Read More
Inventors: Cathey, David A.; Cathey, James J.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Semiconductor processing method of forming complementary n-type doped and p-type doped active regions within a semiconductor substrate
OF THE PREFERRED EMBODIMENTS This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws "to promote the progress of science and useful arts" (... Read More
Inventors: Helm, Mark; Dennison, Charles;, Assignee: Micron Technology, Inc. (Boise, ID) |
Electrically programmable low resistive antifuse element
The present invention introduces a process to fabricate very low resistive antifuse elements by introducing Antimony (Sb) into one or both of the antifuse element's electrodes thereby resulting in sai... Read More
Inventors: Lee, Roger R.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Electrically programmable interconnect element for integrated circuits
OF A PREFERRED EMBODIMENT Those of ordinary skill in the art will realize that the following description of the present invention is illustrative only and not in any way limiting. Other embodiments o... Read More
Inventors: Whitten, Ralph G.; Mohsen, Amr;, Assignee: Aptix Corporation (San Jose, CA) |
Antifuse structure with double oxide layers
According to the present invention, an antifuse structure is provided which is programmable at a relatively low programming voltage and which simultaneously has an acceptable leakage current in its un... Read More
Inventors: Look, Kevin T.; Wolsheimer, Evert A.;, Assignee: Xilinx, Inc. (San Jose, CA) |
Self current limiting antifuse circuit
A self-decoupling antifuse address detection circuit according to the invention is formed from two principal portions, an antifuse bank and a correlation circuit. The antifuse bank includes several pa... Read More
Inventors: Cutter, Douglas J.; Beigel, Kurt D.; Ong, Adrian E.; Ho, Fan; Mullarkey, Patrick J.; Luong, Dien S.; Debenham, Brett; Pierce, Kim M.;, Assignee: Micron Technology, Inc. (Boise, ID) |
Active Solid-state 
