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Details
Inventors: Malchow, Max E.;
Assignee: RCA Corporation (New York, NY)
Primary Examiner: Mullins; James B.
Assistant Examiner:
Attorney, Agent or Firm: Whitacre; Eugene M., Rasmussen; Paul J., Limberg; Allen LeRoy

A common-emitter-amplifier transistor with tuned collector circuit has its gain controlled by the variation of an emitter degeneration resistance responsive to an automatic gain control voltage. This emitter degeneration resistance is provided by the collector-to-emitter path of a gain-controlling transistor having relatively large emitter-base junction area and receiving the automatic gain control voltage at its base electrode. The amplifier transistor is provided temperature compensated base biasing so its emitter-follower action maintains its emitter electrode at a voltage, which applied as the emitter-to-collector voltage of the gain controlling transistor conditions the gain controlling transistor to operate in saturation. Under strong signal conditions the increase in emitter degeneration resistance reduces the severity of cross-modulation and inter-modulation effects. The disclosure describes an AM radio receiver using this type of automatic gain control for its r-f and i-f amplifier stages. Circuitry for avoiding overload distortion in the r-f amplifier is also described.

DETAILED DESCRIPTION What is claimed is: 1.
A gain-controlled amplifier with tuned load comprising: first and second transistors of the same conductivity type having respectively small and respectively large area base-emitter junctions and having respective base, emitter and collector electrodes; an input signal terminal; a feed-forward capacitor connected between said input signal terminal and said tuned load means; means for connecting the collector electrode of said first transistor to said tuned load means and to an operating voltage; means connecting said second transistor for providing between its emitter and collector electrodes an electrically adjustable emitter degeneration resistance for said first transistor, controllable in response to the emitter-to-base potential of said second transistor, including a direct connection of the emitter electrode of said first transistor to the collector electrode of said second transistor, a connection of the emitter electrode of said second transistor to a reference voltage and signal ground, and means for applying a temperature-compensated quiescent potential between the emitter electrode of said second transistor and the base electrode of said first transistor that tends to maintain said second transistor in saturated conduction; means responsive to the amplitude of the response to said input signal appearing at said tuned load for developing an automatic gain control voltage; means for applying said automatic gain control voltage as the emitter-to-base potential of said second transistor; and means for selectively providing drive to the base electrode of said first transistor from said input signal terminal, including means for sensing when said automatic gain control voltage is of a level indicating that the amplitude of the response to said input signal appearing at said tuned load is sufficient, that the portion of that response attributable to input signal current fed forward through said feed-forward capacitor exceeds the portion of that response caused by the collector current of said first transistor, and including means responsive to that condition being sensed for interrupting drive otherwise provided to the base electrode of said first transistor from said input signal terminal



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