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Methods for producing compound semiconductor devices
| Details |
Inventors: Miyazawa, Seiichi; Mizutani, Natsuhiko;
Assignee: Canon Kabushiki Kaisha (Tokyo, JP)
Primary Examiner: Kunemund; Robert
Assistant Examiner:
Attorney, Agent or Firm: Fitzpatrick, Cella, Harper & Scinto
In a method for producing a compound semiconductor device such as laser diodes, FET and HEMT, compound semiconductor is grown at a substrate temperature not greater than 500.degree. C. to form a semiconductor layer on a substrate of the semiconductor device. Then, an appropriate treatment, such as heat-treatment in reducing atmosphere, current flow treatment and hydrogen plasma treatment, is conducted to reduce crystal defects in the semiconductor layer attributable to the crystal growth at the low substrate temperature not greater than 500.degree. C. |
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DETAILED DESCRIPTION It is an object of the present invention to provide a method for producing compound semiconductor devices, whose crystallinity is improved, in order that high quality crystal layers can be fabricated on a substrate made up of material different therefrom, at low temperatures, so that inter-diffusions are eliminated and that stresses due to the difference in thermal expansion coefficient are suppressed.
It is another object of the present invention to provide a method for producing semiconductor devices, whose crystallinity and boundary-plane flatness are improved, at low growth temperatures.
The present invention is generally directed to a method of fabricating a semiconductor device which includes a step of growing a compound semiconductor at a substrate temperature not greater than 500.
degree.
C.
to form a semiconductor layer on a substrate of the devic, and a step of reducing crystal defects of the semiconductor layer attributable to the growth at the low substrate temperature not greater than 500.
degree.
C.
According to one aspect of the present invention, a method for producing a compound semiconductor device is characterized in that a compound semiconductor containing at least, for example, III and V group elements is grown by the vacuum deposition at a substrate temperature not greater than 500.
degree.
C.
to form semiconductor layers of the semiconductor device, and that the thus fabricated semiconductor device is heat-treated in reducing atmosphere containing hydrogen or the like.
According to another aspect of the present invention, a method for producing a compound semiconductor device is characterized in that a crystal layer of the device is formed on a substrate with materials belonging to at least two different groups of the periodic law table, at a crystal growth temperature not greater than or below 500.
degree.
C.
, and that a current is caused to flow into the thus formed crystal layer.
According to the present invention, a substrate temperature at the time of growth of compound semiconductor hereto-interface is set to a value not greater than 500
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Audio Signal Processing 
