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Method-of-manufacturing-a-Xmos-insulated-transistor

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Method of manufacturing a Xmos insulated transistor

Details

Inventors: Mukai, Mikio;
Assignee: Sony Corporation (Tokyo, JP)
Primary Examiner: Wilczewski; Mary
Assistant Examiner: Dutton; Brian K.
Attorney, Agent or Firm: Hill, Steadman & Simpson

A method of manufacturing a lateral insulated gate field effect transistor comprises the steps of forming a projecting portion on a first major surface of a semiconductor substrate, forming a pair of gate portions each of which is formed in each side of the projecting portion, forming an insulating layer on the resulting surface of the semiconductor substrate by burying the projecting portion and the pair of gate portions, and removing the semiconductor substrate from a second major surface of the semiconductor substrate to a position of the insulating layer in which the projecting portion is buried to expose the bottom surface of the projecting portion.

DETAILED DESCRIPTION It is therefore an object of the present invention to provide a method of manufacturing a lateral insulated gate field effect transistor having sufficiently high carrier mobility, excellent switching characteristic and excellent frequency characteristic.
According to an aspect of the present invention, there is provided a method of manufacturing a lateral insulated gate field effect transistor which comprises the steps of forming a projecting portion on a first major surface of a semiconductor substrate, forming a pair of gate portions each of which is formed in each side of the projecting portion, forming an insulating layer on the resulting surface of the semiconductor substrate by burying the projecting portion and the pair of gate portions and removing the semiconductor substrate from a second major surface of the semiconductor substrate to a position of the insulating layer in which the projecting portion is buried to expose the bottom surface of the projecting portion.

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