DETAILED DESCRIPTION The foregoing object of the present invention can be attained by an improved technique for the barrier property, that is, a method of manufacturing a semiconductor device comprising the steps of: forming a diffusion region on a semiconductor substrate, forming a silicon compound film on the diffusion region, forming a metal film on the silicon compound film to form a metal silicide film, further forming an interlayer film.
forming a barrier metal material film on the interlayer film, then patterning the barrier metal material film to obtain a barrier metal layer, subsequently, patterning the interlayer film to form a contact hole and burying a wiring material into the contact hole thereby forming wiring.
In the present invention, any of silicon compounds can be used so long as a metal film can be formed thereon to form a metal silicide film and, for example, a silicon oxide film such as of SiO.
sub.
2 or a silicon nitride film such as of Si.
sub.
3 N.
sub.
4 can be used.
A preferred thickness of the silicon compound film is from 3-30 nm since silicidation by heat treatment or the like is facilitated.
Any of the metal films that can form a barrier metal by silicidation can be used and Ti, W, Co, Ni or alloys thereof (or intermetallic compound) or oxides, nitrides, oxinitrides thereof can be used.
A technique of obtaining a metal silicide film by forming a metal film on a silicon compound film has been proposed by the present applicant and the resultant metal silicide film structure is referred to as a SITOX structure.
Detailed descriptions can be referred to in Japanese Patent Laid-Open Hei 2-260630 by the present applicant and IEDM90 (1990 IEEE), pp 249-252, by Hirofumi Sumi, et al, "New Silicidation Technology by SITOX (Silicidation Through Oxide) and Its Impact on Subhalf Micron MOS Devices".
According to another aspect of the present invention, a further improvement for the SITOX structure can be attained.
That is, a method of manufacturing a semiconductor device in accordance with another aspect of the present invention comprises: forming a heat resistant silicide on a semiconductor substrate, injecting an impurity into the heat resistant silicide by ion implantation and then forming a junction region by solid phase diffusion
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