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Details

Inventors: Takikawa, Masahiko;
Assignee: Fujitsu Limited (Kawasaki, JP)
Primary Examiner: Hearn; Brian E.
Assistant Examiner: Fleck; Linda J.
Attorney, Agent or Firm: Staas & Halsey

A semiconductor device includes an InP substrate, an intrinsic InGaAs channel layer formed on the InP substrate and lattice matched to the InP substrate, a doped GaAsSb carrier supply layer formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, a gate electrode formed on the doped GaAsSb carrier supply layer, and a source electrode and a drain electrode which are respectively formed on the doped GaAsSb carrier supply layer and located on both sides of the gate electrode.

DETAILED DESCRIPTION Accordingly, it is a general object of the present invention to provide a novel and useful semiconductor device and production method thereof, in which the problems described above are eliminated.
Another and more specific object of the present invention is to provide a semiconductor device comprising an InP substrate, an intrinsic InGaAs channel layer formed on the InP substrate and lattice matched to the InP substrate, a doped GaAsSb carrier supply layer formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, where the doped GaAsSb carrier supply layer makes contact with the intrinsic InGaAs channel layer, a gate electrode formed on the doped GaAsSb carrier supply layer, and a source electrode and a drain electrode which are respectively formed on the doped GaAsSb carrier supply layer and located on both sides of the gate electrode.
According to the semiconductor device of the present invention, it is possible to easily realize a high-speed semiconductor device having satisfactory characteristics.
Still another object of the present invention is to provide a semiconductor device comprising an InP substrate, an intrinsic InGaAs channel layer formed on the InP substrate and lattice matched to the InP substrate, a first doped GaAsSb carrier supply layer formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, an etching stopper layer formed on the first doped GaAsSb carrier supply layer, a second doped GaAsSb carrier supply layer formed on the etching stopper layer, at least a first gate electrode formed on the second doped GaAsSb carrier supply layer, and a first source electrode and a first drain electrode which are respectively formed on the second doped GaAsSb carrier supply layer and located on both sides of the first gate electrode.
According to the semiconductor device of the present invention, it is possible to easily realize a high-speed semiconductor device having satisfactory characteristics.
In addition, it is possible to realize enhancement/depletion type high-speed semiconductor devices

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