Non-volatile semiconductor memory device

DETAILED DESCRIPTION The present invention is conceived for solving the above-described problems and an object thereof is to provide a flash memory which enables to obtain both good performance and reliability even in the generation where V.
sub.
CC equals to 3.
3V.
A non-volatile semiconductor memory device in accordance with the present invention is provided with a memory cell including a tunnel oxide film, a floating gate and a control gate.
The device is also provided with a first transistor including a first gate insulating film and a first gate and driving a first voltage and a second transistor including a second gate insulating film and a second gate and driving a second voltage which has an absolute value greater than the first voltage.
The expression of t(V.
sub.
CC)<t(TN) is satisfied where t(TN) is the thickness of the tunnel oxide film and t(V.
sub.
CC) is the thickness of the first gate insulating film.
According to the non-volatile semiconductor memory device in accordance with the present invention, thickness t(V.
sub.
CC) of the gate insulating film of the first transistor can be made small without reducing thickness t(TN) of the tunnel oxide film because t(V.
sub.
CC) is less than t(TN).
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.