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Home CPUs Polyamide-containing-the-hexafluoroisopropylidene-group-and-process-of-using-to-form-a-positive-image

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 Polyamide containing the hexafluoroisopropylidene group and process of using to form a positive image

Details
Inventors: Mueller, Werner H.; Khanna, Dinesh N.; Hupfer, Bernd;
Assignee: Hoechst Celanese Corporation (Somerville, NJ)
Primary Examiner: Bowers, Jr.; Charles L.
Assistant Examiner: Chu; John S.
Attorney, Agent or Firm: Tully; Michael J.

This invention is that of high temperature polyamides containing the hexafluoroisopropylidene group. The high temperature polyamides of the invention and photo or radiation sensitizers provide improved high temperature positive resists which can be developed in aqueous alkaline developer and thermally anneal to form heat resistant, polyoxazole relief structures suitable for use in microelectronic and printing applications. The positive photoresists of the invention have improved solubility in coating solvents and improved photospeed. The polyamides of the invention can be prepared by conventional condensation reactions; e.g. the condensation of a diamine and diacid chloride. In addition the polyamides of this invention provide high temperature protective coatings with superior adhesion properties in applications other than the photoresist area.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS This invention is that of a high temperature polyamide containing the hexafluoroisopropylidene group.
These polyamide have the following general formula (1): ##STR2## where: X is the divalent group: ##STR3## a=0.
10 to 0.
50 mole fraction b=0.
25 to 0.
50 mole fraction c=0.
00 to 0.
40 mole fraction d=0.
00 to 0.
25 mole fraction where: a+b+c+d=1, said mole fractions being based upon the total moles of X+Y+Z in the polymer.
where: n is an integer from about 2-500; preferably 20-300 and for photoresist application most preferably about 5-200.
wherein R is independently selected from hydrogen and a substituted or unsubstituted aliphatic or aromatic monovalent group having up to nine carbons; preferably, R is selected from hydrogen, methyl, ethyl and phenyl.
The groups Y and Z are unsubstituted or a substituted aliphatic, aromatic or alicyclic divalent group having up to 60 carbons and mixtures thereof.
The divalent group Y is independently selected from methylene and difluoromethylene and both the divalent groups Y and Z are independently selected from polydifluoromethylene of 2 to 12 carbons; a substituted or unsubstituted polymethylene of 2 to 12 carbons; cyclohexylene; cyclohexenylene; piperazinylene; arylene; biarylene; napthalenylene; and polyarylene wherein the linking group (hereinafter W) between the arylene rings is independently selected from a single carbon to carbon bond; methylene; polymethylene of 2 to 12 carbons; difluoromethylene, polydifluoromethylene from 2 to 12 carbons; hexafluoroisopropylidene; isopropylidene; oxy; thio; sulfinyl; sulfonyl; sulfonyldioxy; sulfonamido; carbonyl; ##STR4## cyclohexylene; cyclohexenylene; naphthalenylene and mixtures thereof.
The substituent A is independently selected from substituted or unsubstituted: alkyl of 1 to 8 carbons, phenyl and naphthyl.
The group D is independently selected from: oxy, thio, carbonyl, oxycarbonyl, sulfonamido, sulfinyl, sulfony, sulfonyldioxy, benzenedicarbonyl, benzenedioxycarbonyl ##STR5## The integer n' is 1 to 25



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