Process for thin film formation

DETAILED DESCRIPTION An object of the present invention is to solve the problems described above and to provide a process for formating a thin metal film or a thin semiconductor film in a fine breadth, for example, of 0.
1 .
mu.
m or less by deposition.
Another object of the present invention is to provide a process for thin film formation, comprising selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.
In the present invention, the surface treatment is preferably conducted with hydrofluoric acid; the energy ray is preferably an electron beam or an ion beam; the thin film is preferably of a metal such as aluminum; the substrate is preferably a semiconductor substrate or an electroconductive substrate; the thin film is preferably formed by chemical vapor deposition; the chemical vapor deposition may be conducted with an organometallic compound as a starting material; the organometallic compound may be alkylaluminum hydride; and the alkylaluminum hydride may be dimethyl aluminum hydride.
The present invention provides a process utilizing hydrogen atoms in a monoatomic layer thickness as an atomic resist in place of a conventional resist mask pattern in consideration of the fact that the lower limit of the working dimension depends on the thickness of the organic resist.