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Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same
| Details |
Inventors: Bito, Yasunori; Iwata, Naotaka;
Assignee: NEC Corporation (Tokyo, JP)
Primary Examiner: Mintel; William
Assistant Examiner:
Attorney, Agent or Firm: Sughrue, Mion, Zinn, Macpeak & Seas, PLLC
In a method of manufacturing a semiconductor device, the InP substrate is subjected to a NH.sub.3 plasma processing by a plasma CVD apparatus into which NH.sub.3 gas is introduced. The InP oxide film is deoxided and removed therefrom and an InN (nitride) film is then formed thereon. S.sub.i H.sub.3 gas and NH.sub.3 gas are introduced into the plasma CVD apparatus to form a SiNx spacer layer on the InN (nitride) film. A source electrode and drain electrode are formed as ohmic electrodes. A Pt layer is stacked on the InP channel region by evaporation lift-off or ion beam sputter method to form a gate electrode. Thereafter, by a process similar to that of forming the SiNx/InN spacer layer, a SiNx/InN passivation film is formed on all over the InP substrate including the source electrode, the drain electrode, and the gate electrode. Accordingly, a semiconductor device protected by the passivation film is completed. |
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DETAILED DESCRIPTION It is therefore an object of the present invention to provide a semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and a method of manufacturing the semiconductor device.
It is another object of the present invention to provide a semiconductor device of the type described in which frequency and conductivity characteristics can be improved and a method of manufacturing the semiconductor device.
It is yet another object of the present invention to provide a semiconductor device which has large mutual conductivity without deteriorating gate breakdown voltage and a method of manufacturing the semiconductor device.
It is still another object of the present invention to provide a semiconductor device which has a good electron transfer characteristic and a method of manufacturing the semiconductor device.
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device which consists mainly of a semiconductor crystal having an InP layer, the method comprising the steps of: (A) removing an oxide InP by a processing selected from the group consisting of N.
sub.
2 H.
sub.
4 plasma processing, N.
sub.
3 H.
sub.
6 plasma processing, NH.
sub.
3 plasma processing, and N.
sub.
2 plasma processing; and (B) forming SiNx layer on the InP layer.
The method may comprise the steps of: (A) making a surface of the InP layer be subjected to a processing selected from the group consisting of N.
sub.
2 H.
sub.
4 plasma processing, N.
sub.
3 H.
sub.
6 plasma processing, NH.
sub.
3 plasma processing, and N.
sub.
2 plasma processing to form an InN film on the surface of the InP layer; and (B) forming SiNx layer on the InN film.
The method may comprise the steps of: (A) removing an oxide InP by a processing selected from the group consisting of N.
sub.
2 H.
sub.
4 plasma processing, N.
sub.
3 H.
sub.
6 plasma processing, NH.
sub.
3 plasma processing, and N.
sub.
2 plasma processing; and (B) forming an InN film on a surface of the InP layer by the same processing as that of the removing an oxide InP step selected from the group consisting of N
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