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| Dual edge pulse width modulation system |
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Low voltage latch with uniform stack height
| Details |
Inventors: Burr, James B.;
Assignee: Sun Microsystems, Inc. (Santa Clara, CA)
Primary Examiner: Cunningham; Terry D.
Assistant Examiner: Nguyen; Long
Attorney, Agent or Firm: Gunnison, McKay & Hodgson, L.L.P., McKay; Philip J.
Low voltage latches are designed such that all the transistors included in the latch are low threshold transistors and voltage scalability of the latches of the invention is further increased by designing latches with uniform stack height components. One embodiment of the invention allows for minimum supply voltages of 60 millivolts, an improvement of over thirteen hundred percent compared with the typical prior art minimum voltage requirement of 800 millivolts. |
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DETAILED DESCRIPTION According to one embodiment of the invention, latch components are comprised of low threshold transistors.
In addition, according to one embodiment of the invention, to overcome leakage current and ensure proper latch operation, the channel widths of the low threshold transistors making up the feedback components of the latch are larger than the channel widths of the low threshold transistors making up the storage components of the latch.
This embodiment of the invention allows for minimum supply voltages of 120 millivolts; an improvement of over six hundred percent compared with the typical prior art minimum voltage requirement of 800 millivolts.
In another embodiment of the present invention, a method and structure for providing low voltage latches includes using low threshold transistors having consistent channel dimensions and the use of multi-inverter feedback structures.
In this embodiment of the invention, all the transistors included in a latch have the same channel dimensions, i.
e.
, the same channel length and width.
In order to meet this requirement and still provide a feedback signal of sufficient strength to overcome leakage effects and ensure proper latch operation, latches according to this embodiment of the invention include feedback stages with multiple inverters.
By using transistors of the same channel length and width in the latches of the invention, the voltage scalability of the latch is increased significantly over that of prior art latches.
This embodiment of the invention allows for minimum supply voltages of 85 millivolts; an improvement of over nine hundred percent compared with the typical prior art minimum voltage requirement of 800 millivolts.
In addition to ensuring all of the transistors making up a latch have the same channel dimensions, according to the invention, the minimum voltage requirement of the latch is further reduced by designing the latch with uniform stack height components, i.
e.
, components with equal numbers of transistors in series
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