Method for planning/controlling robot motion |
| In view of the above, the present invention, through one or more of its various aspects and/or ... |
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Intelligent system for generating and executing a sheet metal bending plan |
| In view of the above, the present invention, through one or more of its various aspects and/or ... |
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Method for planning/controlling robot motion |
| In view of the above, the present invention, through one or more of its various aspects and/or ... |
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Method and apparatus for a thermal protection unit |
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Electric power system protection and control system |
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Distributed logic in multiple protective relays |
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Portable flat display adaptor |
| OF THE INVENTION Preferred embodiments of the invention applying a device adaptor to a generic F... |
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Method and apparatus for monitoring and controlling imaging in immersion lithography systems
| Details |
Inventors: Levinson, Harry J.;
Assignee: Advanced Micro Devices, Inc. (Sunnyvale, CA)
Primary Examiner: Toatley, Jr.; Gregory J.
Assistant Examiner: Merlino; Amanda
Attorney, Agent or Firm: Renner, Otto, Boisselle & Sklar, LLP
A method of monitoring an immersion lithography system in which a wafer can be immersed in a liquid immersion medium. The method detects an index of refraction of the immersion medium in a volume of the immersion medium through which an exposure pattern is configured to traverse and determines if the index of refraction is acceptable for exposing the wafer with the exposure pattern. Also disclosed is a monitoring and control system for an immersion lithography system. |
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DETAILED DESCRIPTION What is claimed is: 1. A method of monitoring an immersion lithography system, comprising: immersing at least a portion of a wafer to be exposed in a liquid immersion medium; detecting an index of refraction of the immersion medium in a volumetric portion of the immersion medium through which an exposure pattern is configured to traverse; and determining if the index of refraction is acceptable for exposing the wafer with the exposure pattern by determining i) if the index of refraction is uniform across the traversal volume, ii) if the index of refraction in the traversal volume is within an acceptable range, or iii) both i) and ii). 2. The method according to claim 1, wherein the determining includes determining if the index of refraction is uniform from a first location in the traversal volume to a second location in the traversal volume. 3. The method according to claim 1, wherein the determining includes correlating a measured index of refraction at a measurement device wavelength to an exposure index of refraction at a wavelength of the exposure pattern. 4. The method according to claim 1, wherein the index of refraction is measured throughout the traversal volume. 5. The method according to claim 4, wherein the index of refraction is measured with an interferometer assembly. 6. The method according to claim 5, wherein multiple beams are used to measure the index of refraction throughout the traversal volume. 7. The method according to claim 5, wherein at least one beam is scanned through the traversal volume to measure the index of refraction throughout the traversal volume. 8. The method according to claim 4, wherein the determining includes determining if the index of refraction is uniform from a first location in the traversal volume to a second location in the traversal volume. 9. The method according to claim 1, further comprising controlling the immersion lithography system to defer exposing the wafer if the index of refraction is determined to be unacceptable
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