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D-C-power-source-with-temperature-compensation

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D.C. power source with temperature compensation

Details

Inventors: Sakamoto, Jyunji; Imaizumi, Norio; Shiratani, Eisuke;
Assignee: Tokyo Sanyo Electric Co., Ltd. (Osaka, JA); Sanyo Electric Co., Ltd. (Osaka, JA)
Primary Examiner: Smith; Alfred E.
Assistant Examiner: La Roche; E. R.
Attorney, Agent or Firm: Armstrong, Nikaido & Wegner

An improved D. C. power source whose output voltage is independent of changes in temperature is disclosed. Compensation for changes in temperature is established by three features. For a change of the voltage drop in the forward direction between the base and the emitter of a transistor, a plurality of diodes provided in a bias circuit in the transistor are utilizied; for a change of the current amplification factor .beta. of a transistor, an additional transistor is attached to the transistor, and; for a change of the value of an emitter resistor connected between the emitter of the transistor and the ground, an external stable resistor is utilized. The D. C. power source of the present invention is, in particular, useful for an integrated circuit.

DETAILED DESCRIPTION A main purpose of the present invention is, therefore, to provide a D.
C.
power source having a temperature compensation circuit in which variation in the voltage drop between the base and emitter of a transistor due to variation in the ambient temperature is compensated.
Another purpose of the present invention is to provide a D.
C.
power source having a temperature compensation circuit in which variation or deviation of the current amplification factor h.
sub.
FE or .
beta.
due to variation in the ambient temperature is compensated.
A still further purpose of the present invention is to provide a D.
C.
power source having a temperature compensation circuit in which the effect of variation in the ambient temperature on the output voltage and/or current compensated.
According to the features of the present invention, the change of the voltage drop between the base and the emitter of a trasnsistor due to temperature change is compensated for by using some diodes in the bias circuit of the transistor; the change of the current amplification factor h.
sub.
FE or .
beta.
of a transistor due to temperature change is compensated for by using an additional transistor, and; the change of the characteristics of a circuit due to the change of a value of a resistance because of temperature change is compensated for by using an external stable resistor.

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