Monolithically integrated semiconductor store

DETAILED DESCRIPTION An object of the invention is to further reduce the storage space required for a semiconductor store of the noted type.
This is achieved in accordance with the invention by providing each storage element with a storage capacitor connected in series with first and second transfer gates.
The first transfer gate has its gate connected to a word line and the second transfer gate has its gate connected to another line connecting with the word decoder.
The source-drain paths of the first and second transfer gates are connected in series to a bit line.
The bit lines are provided as doped zones of opposite conductivity type which are provided at a surface of a semiconductor layer.
First and second strips of a first conductive coating are applied on an insulating layer over the semiconductor layer on each side of the bit lines.
A further insulating layer is provided over the first and second strips.
A second conductive coating is applied over the second insulating layer such that it lies over the first and second strips and also extends between a gap between the first and second strips.
The word line connects with the second conductive coating.
The advantage which can be attained by the invention is that in a storage field comprising a given number of storage elements, in comparison to conventional forms of storage the number of requisite word lines is reduced by half, and the bit lines are reduced to approximately half their length.
This provides the possibility of substantially reducing the capacitance of the storage capacitors while maintaining the reliability of analysis of the stored information, which leads to a significant reduction in the semiconductor area required for the individual storage element and thus for the entire store.