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Home Fault Detection Semiconductor-device

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Details
Inventors: Iwahashi, Hiroshi; Ochii, Kiyofumi;
Assignee: Tokyo Shibaura Denki Kabushiki Kaisha (Kawasaki, JP)
Primary Examiner:
Assistant Examiner:
Attorney, Agent or Firm:

A programming circuit used with a semiconductor memory comprising normal as well as spare memory cells allows any of the normal memory cells to be replaced by a spare memory cell and includes a fuse and a MOSFET connected in series between first and second power supply terminals. A voltage signal at the junction between the fuse and the MOSFET is delivered to the gate of the MOSFET after being delayed after power is supplied.

DETAILED DESCRIPTION It is accordingly the object of this invention to provide a reliable semiconductor device which enables binary data to be stored in a nonvolatile memory element without conducting current therethrough.
To attain the above-mentioned object, this invention provides a semiconductor device which comprises a memory element, in which an impedance prevailing across both terminals is set at a first and second level in a nonvolatile state, and a switching element, both elements being connected in series between first and second power supply terminals, and a control circuit which supplies an output signal from the junction of the memory element and switching element to a control terminal of the switching element through a delay element.



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