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Details
Inventors: Higuchi, Mitsuo; Hagihara, Ryoji;
Assignee: Fujitsu Limited (Kawasaki, JP)
Primary Examiner: Fears; Terrell W.
Assistant Examiner:
Attorney, Agent or Firm: Staas & Halsey

A semiconductor memory device includes a redundancy decoder circuit. The redundancy decoder circuit includes FAMOS transistors to which an address pattern, corresponding to an address of a defective memory cell to be replaced by a redundancy memory cell, is written at the floating gates of the FAMOS transistors. The FAMOS transistors are depletion type. Control gates thereof receive a voltage having ground level or lower during a usual memory access mode.

DETAILED DESCRIPTION It is an object of the present invention to provide a semiconductor memory device including a FAMOS transistor type redundancy decoder circuit suitable for practical use.
The above object is attained by using, not enhancement type FAMOS transistors, but depletion type FAMOS transistors, in addition, by commonly applying a voltage of ground level or lower to the control gates of the FAMOS transistors during a usual memory access mode.



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