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Metal halogen electrochemical cell |
| OF THE INVENTION Turning now to the sole FIGURE of the drawing, there is shown one embodiment of ... |
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Method for improving stability of Li/MnO.sub.2 cells |
| What is claimed is: 1. A method for improving the stability of a non-aqueous cell containing an ... |
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Means of providing pressure relief to sealed galvanic cell |
| Briefly stated, in accordance with one aspect of the invention the foregoing objects are achieved ... |
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Fireproof elastic packing material |
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Electrochemical cell with pressurized liquid electrolyte |
| What is claimed is: 1. An electrochemical cell comprising a pressurized cell can having a narrowed ... |
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Method of operating a solid electrolyte fuel cell |
| It is an object of the present invention to overcome the above-mentioned disadvantages and provide ... |
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Mercury-free zinc electrode |
| What is claimed is: 1. An improved zinc electrode consisting of mercury-free material, said ... |
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Electroluminescent laminate and a process for forming address lines therein
| Details |
Inventors: Wu, Xingwei; Stiles, James Alexander Robert; Foo, Ken Kok; Bailey, Phillip;
Assignee: Westaim Technologies, Inc. (Fort Saskatchewan, CA)
Primary Examiner: Nold; Charles
Assistant Examiner:
Attorney, Agent or Firm: Greenlee, Winner and Sullivan, P.C.
An improved dielectric layer of an electroluminescent laminate, and method of preparation are provided. The dielectric layer is formed as a thick layer from a ceramic material to provide: a dielectric strength greater than about 1.0.times.10.sup.6 V/m; a dielectric constant such that the ratio of the dielectric constant of the dielectric material to that of the phosphor layer is greater than about 50:1; a thickness such that the ratio of the thickness of the dielectric layer to that of the phosphor layer is in the range of about 20:1 to 500:1; and a surface adjacent the phosphor layer which is compatible with the phosphor layer and sufficiently smooth that the phosphor layer illuminates generally uniformly at a given excitation voltage. The invention also provides for electrical connection of an electroluminescent laminate to voltage driving circuity with through hole technology. The invention also extends to laser scribing the transparent conductor lines of an electroluminescent laminate. |
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DETAILED DESCRIPTION We claim: 1. A process of forming an EL laminate having a phosphor layer sandwiched between a front and rear set of intersecting address lines, the rear address lines being formed on a rear substrate and the phosphor layer being separated from the rear address lines, and optionally from the front address lines, by one or more dielectric layers comprising the steps of: (a) forming the rear address lines on the substrate, the substrate having sufficient rigidity to support the laminate; (b) forming a dielectric layer on the rear address lines; (c) forming the phosphor layer above the dielectric layer; (d) optionally forming a transparent dielectric layer on the phosphor layer; and then (e) forming the front address lines on the underlying phosphor or transparent dielectric layer by depositing a layer of transparent conductive material on the underlying layer and scribing the address lines by applying a focused laser beam along areas of the transparent conductive material between the address lines to be formed, said laser beam having a wavelength which is substantially unabsorbed by the transparent conductive material, the transparent dielectric layer and the phosphor layer but which is absorbed by the underlying dielectric layer, such that a portion of the underlying dielectric layer is directly ablated by the laser beam and the overlying phosphor, optional transparent dielectric layer and transparent conductive material are indirectly ablated throughout their thicknesses in the areas between the address lines. 2. The process of claim 1, wherein the laser beam has a wavelength greater than about 400 cm. 3. The process of claim 2, wherein the composition and thicknesses of the layers are such that: . SIGMA. . sub. i . alpha. . sub. d. sbsb. i T. sub. d. sbsb. i >. SIGMA. . sub. i . alpha. . sub. t. sbsb. i T. sub. t. sbsb. i wherein; . alpha. . sub. d =absorption coefficient of underlying dielectric layer . alpha. . sub. t =absorption coefficient of transparent layers T. sub. d =thickness of underlying dielectric layer T
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