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| Solid oxide fuel cell matrix and modules |
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| Fuel cell system |
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| Method and device for gaseous fuel cell operation |
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Electronic component using a silicon carbide substrate and a method of making it
| Details |
Inventors: Kanda, Atsushi; Takagi, Shunichi; Kambe, Rokuro;
Assignee: NGK Spark Plug Co., Ltd. (Aichi, JP)
Primary Examiner: Rutledge; L. Dewayne
Assistant Examiner: Zimmerman; John J.
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett & Dunner
The bond strength between a silicon carbide substrate and a metal layer comprised of a series of metal films is improved without detrimentally affecting other properties of such a device by interposing a layer of silicon, Si.sub.2 Mo or mixtures thereof between the substrate and the first metal film in the layer which is preferably Ti, Zr or Hf. |
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DETAILED DESCRIPTION What is claimed is: 1.
An electronic device comprising: a sintered substrate consisting essentially of silicon carbide; an intermediate layer consisting essentially of a material selected from the group consisting of silicon, molybdenum disilicide and mixtures thereof, said material being applied to a surface of said substrate, said intermediate layer having a thickness in the range of from about 500 .
ANG.
to 5000 .
ANG.
; and a metal layer applied to the surface of said intermediate layer.
2.
The device of claim 1 wherein said metal layer applied to said intermediate layer includes a metal film applied to said intermediate layer, said metal film consisting essentially of a metal selected from the group consisting of titanium, zirconium and hafnium.
3.
The device of claim 2 wherein said metal film has a thickness in the range of from 1000 to 2000 .
ANG.
.
4.
An electronic device comprising: a sintered substrate consisting essentially of silicon carbide; an intermediate layer consisting essentially of a material selected from the group consisting of silicon, molybdenum disilicide and mixtures thereof, said material being applied to a surface of said substrate, said intermediate layer having a thickness in the range of from about 500 .
ANG.
to 5000 .
ANG.
; and a metal layer comprised of a first metal film applied to a surface of said intermediate layer and a plurality of metal films applied in layers on said first metal film.
5.
The device of claim 4 wherein said first metal film consists essentially of a metal selected from the group consisting of titanium, zirconium and hafnium.
6.
The device of claim 5 wherein said first metal film has a thickness in the range of from 1000 to 2000 .
ANG.
.
7.
The device of claim 5 wherein said plurality of metal films applied to said first metal film comprise: a second metal film consisting essentially of a metal selected from the group consisting of chromium, molybdenum and tungsten; and a third metal film consisting essentially of a metal selected from the group consisting of copper, silver and gold
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