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Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method
| Details |
Inventors: Mitsui, Masaru;
Assignee: Hoya Corporation (Tokyo, JP)
Primary Examiner: Rosasco; S.
Assistant Examiner:
Attorney, Agent or Firm: Oliff & Berridge, PLC
An object is to provide acid-resistant, highly reliable phase shift masks, and phase shift mask blanks, wherewith high-precision patterning is possible. A halftone phase shift mask blank comprising a transparent substrate 10, a halftone material film 11 laminated on that transparent substrate, and a metal film 12 laminated on that halftone material film, wherein the metal film is formed by a plurality of metal films having different etching rates, and the etching rate for the metal film positioned on the transparent substrate side is set so that it is faster, either in stages or continuously, than the etching rate of the metal film positioned on the surface side. |
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DETAILED DESCRIPTION The present invention has been fashioned in view of the problems with the prior art set forth above.
An object of the present invention is to provide halftone phase shift masks and halftone phase shift mask blanks that exhibit high acid resistance and high reliability, and wherewith high precision patterning is possible.
In order to resolve the problems stated in the foregoing, a first invention is a halftone phase shift mask blank comprising: a transparent substrate; a halftone material film laminated on that transparent substrate; and a metal film laminated on that halftone material film; wherein: the metal film is configured with materials having differing etching rates, as the etching proceeds from the surface side toward the transparent substrate side, either in stages, or continuously, or partly in stages and partly continuously, with that etching rate set so that it becomes faster, as the transparent substrate side is approached from the surface side, either in stages, or continuously, or partly in stages and partly continuously.
A second invention is the halftone phase shift mask blank according to the first invention, wherein the metal film is employed as a mask when forming a pattern on the halftone material film by photolithography.
A third invention is the halftone phase shift mask blank according to the second invention, wherein the metal film comprises materials having etching characteristics different from those of the halftone material film.
A fourth invention is the halftone phase shift mask blank according to the third invention, wherein the metal film comprises materials having a faster etching rate than the halftone material film.
A fifth invention is the halftone phase shift mask blank according to the second invention, wherein the metal film comprises materials exhibiting a light-blocking function.
A sixth invention is the halftone phase shift mask blank according to the fifth invention, wherein the halftone material film has molybdenum and silicon as its main constituent elements, and the metal film has chromium as its main constituent element
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