 Apparatus for monitoring available chlorine in swimming pools |
| What is claimed is: 1. Apparatus for measuring the available halogen concentration of an aqueous ... |
|
| Prevention of deleterious deposits in a coal liquefaction system |
| What is claimed is: 1. A coal liquefaction process for reducing deleterious reaction zone deposits, ... |
|
| Loose parts plating device |
| The present invention provides a straightforward economical means for electroplating selected areas ... |
|
| Adhesion between phosphor and topcoat layers of an X-ray intensifying screen |
| OF THE INVENTION X-ray intensifying screens comprising an active layer comprising a phosphor ... |
|
| Packaging of fresh fruit and vegetables |
| OF THE DRAWING In order further to illustrate the present invention, reference will now be made to ... |
|
| Battery charger adapter |
| While this invention is susceptible of embodiment in many different forms, there is shown in the ... |
|
| Separator basket preforms for primary cells and methods of forming and inserting same |
| What is claimed is: 1. An elongate strip of a plurality of preforms for primary cell separator ... |
|
| Liquid fuel cell |
| We claim: 1. A liquid fuel cell comprising: an anode made of carbon powders carrying an electrode ... |
|
| Membrane-electrode assembly for a direct methanol fuel cell |
| The present invention is an MEA and a method of fabricating an MEA which can be used in a direct ... |
|
|
Metallic silicide production
| Details |
Inventors: Scovell, Peter D.; Rosser, Paul J.; Tomkins, Gary J.;
Assignee: ITT Industries, Inc. (New York, NY)
Primary Examiner: Demers; Arthur P.
Assistant Examiner:
Attorney, Agent or Firm: Raden; James B.
A metallic silicide layer is formed on a substrate by pulse heating, in an inert atmosphere, metal and silicon deposited on the substrate to a temperature and for a time sufficient to cause interdiffusion of the metal and silicon. |
|
DETAILED DESCRIPTION What is claimed is: 1.
A method of forming a metallic silicide layer on a substrate, including the steps of depositing the metal and silicon on the substrate, and subsequently pulse heating the substrate, in an inert atmosphere, to a temperature and in a time sufficient to cause interdiffusion of the metal and silicon to form a homogenous layer and reaction of the constituents thereof to form the metallic silicide.
2.
A method as claimed in claim 1, wherein the step of depositing the metal and silicon comprises depositing alternate layers of the metal and silicon on the substrate.
3.
A method as claimed in claim 1, wherein the step of depositing the metal and silicon comprises co-sputtering the metal and silicon on the substrate.
4.
A method as claimed in any one of the preceding claims wherein the metal is titanium.
5.
A method as claimed in claim 2, wherein the metal is titanium, and wherein the substrate is pulse heated to a temperature greater than 900.
degree.
C.
within a time of the order of 10 seconds, whereby to form titanium silicide throughout the homogenous layer.
6.
A method as claimed in claim 2, wherein the metal is titanium, and wherein the substrate is successively pulse heated a plurality of times to a temperature greater than 600.
degree.
C.
but less than 900.
degree.
C.
, whereby to form titanium silicide.
7.
A method as claimed in claim 1, wherein the substrate is a semiconductor body and wherein the metallic silide provides electrodes for or interconnections between doped regions in the semiconductor body.
8.
A method as claimed in claim 7, wherein the pulse heating to form the metallic silicide serves also to activate or reactivate dopants in the semiconductor body.
9.
A method as claimed in claim 7 or 8, wherein the semiconductor is silicon.
10.
A method as claimed in claim 1, wherein the inert atmosphere comprises nitrogen.
Description:
This invention relates to metallic silicide production and, in particular, to the production of metallic silicide layers on substrates, such as semiconductor bodies, for electrical interconnection purposes
|
|
Fuel Cells 
