Method of depositing doped refractory metal silicides using DC magnetron/RF diode mode co-sputtering techniques

DETAILED DESCRIPTION What is claimed is: 1.
A method of sputtering material from a pair of target electrodes onto substrate means, comprising the steps of: disposing a pair of target electrodes each having a sputtering surface within a low pressure working gas environment, one of which has a sputtering surface comprising a material doped with a selected dopant; applying a DC voltage in the presence of a magnetic field to at least one of said target electrodes; and supporting within said gaseous environment said substrate means intended to be sputter coated to thereby coat said substrate means with material from said target electrodes.
2.
The method as claimed in claim 1 wherein said doped material is an insulator made conductive.
3.
The method as claimed in claim 2 wherein said doped material comprises silicon doped with said dopant, and wherein the other sputtering surface comprises a refractory metal.
4.
The method as claimed in claim 3 wherein the DC voltage is applied to the electrode having the silicon surface.
5.
The method as claimed in claim 4 wherein the DC voltage is also applied to the electrode having the sputtering surface of refractory metal.
6.
The method as claimed in claim 4 wherein the voltage applied to the electrode having the surface of refractory metal is RF.
7.
The method as claimed in claim 3 further including the step of applying a bias voltage to said substrate means.
8.
The method as claimed in claim 1 wherein the other sputtering surface comprises pure silicon and the voltage applied to the target electrode having said silicon surface is RF.
9.
The method as claimed in claim 8 further including the step of applying a bias voltage to said substrate means.
10.
The method as claimed in claim 1 wherein said doped sputtering surface comprises doped refractory metal and the other sputtering surface comprises pure silicon and the voltage applied to the doped surface electrode is DC and the voltage applied to the pure silicon surface electrode is RF.
11.
The method as claimed in claim 1 wherein said doped sputtering surface is doped silicon and the other of said sputtering surfaces comprises a refractory metal and the voltage applied to both said target electrodes is DC in the presence of a magnetic field