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Multilayer material and device comprising this material
| Details |
Inventors: Lagues, Michel;
Assignee: Lagues; Michael (Fontenay-Aux-Roses, FR); Lewiner; Jacques (Saint-Cloud, FR); Ufinnova (Paris, FR)
Primary Examiner: Yamnitzky; Marie
Assistant Examiner:
Attorney, Agent or Firm: Larson & Taylor
A material formed as a film comprised of monomolecular layers (2,3,4,5) stacked on a substrate (1), wherein said film includes at least one first set (R) of layers which form an electric charge reservoir, and a second set (S) of layers which form a conductive cell and which contain a number of conductive copper oxide layers (4), separated from each other by intermediate layers (5), the reservoir and the conductive cell being adjacent in the layer stack. There are at least four conductive copper oxide layers, and the intermediate layers have the chemical formula Ca.sub.1-x M.sub.x and are free of strontium, wherein x is a real number between 0 and 0.2, M is a component with an ionic radius close to that of the Ca.sup.2+ ion, and the intermediate layers may be complete or not. |
|
DETAILED DESCRIPTION I claim: 1.
A material in the form of a film consisting of a stack of monomolecular crystalline layers superposed with one another on a substrate, including at least one first assembly of layers which constitutes an electric charge reservoir, and at least one second assembly of layers which forms a conducting cell and which consists of a certain number n of layers composed of copper oxide of the form CuO.
sub.
2, separated from one another by intermediate layers, the charge reservoir and the conducting cell being adjacent in the stack of layers, wherein n is an integer at least equal to 4 and the intermediate layers have the chemical formula Ca.
sub.
1-x M.
sub.
x and are free of strontium, x being a real number greater than 0 and at most equal to 0.
2, M being a substituent element having an ionic radius sufficiently close to that of the Ca.
sup.
2+ ion so as not to disturb the crystalline structure of said intermediate layers, and the intermediate layers being optionally complete.
2.
Material according to claim 1, in which the element M is Bi.
3.
Material according to claim 1, in which the electric charge reservoir consists of at least two layers composed of a calcium oxide, which are separated by at least one layer composed of at least one metal oxide.
4.
Material according to claim 3, in which the metal oxide is an oxide of a metal chosen from the group consisting of: Bi, Hg, Tl and Cu.
5.
Material according to claim 4, in which the metal oxide is a bismuth oxide.
6.
Material according to claim 4, in which the metal oxide is a copper oxide.
7.
Material according to claim 1, in which n is at least equal to 6.
8.
Material according to claim 1, in which n is at least equal to 8.
9.
Material according to claim 1, including a plurality of said conducting cells which are stacked alternately with said electric charge reservoirs.
10.
Electronic component comprising a material according to claim 1, said component being chosen from the group consisting of interconnections, fast transistors and microwave components
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