Phase-shifting mask and a manufacturing method thereof

DETAILED DESCRIPTION The present invention is devised to solve the above-described problems.
Accordingly, it is an object of the present invention to provide a mask and manufacturing method thereof, in which a phase shifter is formed using thermal deformation of an organic photoresist and chemical mechanical polishing (CMP) to prevent pattern errors at an 180.
degree.
/0.
degree.
phase boundary.
In one aspect of the present invention, to achieve the above object, there is provided a phase-shifting mask including a transparent substrate, a conductive transparent layer formed on the transparent substrate, a plurality of light shielding layers formed at specified intervals on the transparent layer.
In addition, a hemispherical phase shifter is formed between pairs of light shielding layers.
The hemispherical phase shifter is further formed to have a planar top surface and round side surfaces.
In accordance with another aspect of the present invention, a method is provided for forming a phase-shifting mask including the steps of providing a substrate, forming a conductive transparent layer on the substrate, forming light shielding layers at specified intervals on the conductive transparent layer, and forming phase shifters having a planar top surface and rounded side surface in phase-shifting regions between the light shielding layers.