Phase shifting mask and method of manufacturing the same

DETAILED DESCRIPTION It is an object to provide the phase shifting mask which facilitates an adjustment of the line width and thickness of the phase shifting layer by forming the light shielding layer inside the trench to improve the phase shifting effect, and to provide the method of manufacturing such a mask.
The phase shifting mask of this invention comprises a transparent substrate having at least one or more trenches spaced apart from each other by a predetermined distance, an opaque layer filling some portion of the trench, and a phase shifting layer formed on the substrate area between the trenches.
And, the method of manufacturing such a mask comprises the steps of forming a first photoresist pattern by etching the coated photoresist film on a transparent substrate, forming at least one or more trenches by etching the transparent substrate masked with the patterned photoresist layer, forming a opaque layer occupying some portion of the trench through etch back process applying to a deposited metal layer on the whole surface of the substrate, and forming a phase shifting layer over the surface of the non-etched transparent substrate and exposing a substrate area between the phase shifting layer and the opaque layer.