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 Photoconductor element and method of making the element

Details
Inventors: Fujiwara, Shinji; Shibata, Takuo;
Assignee: Matsushita Electric Industrial Co., Ltd. (JA)
Primary Examiner: Edlow; Martin H.
Assistant Examiner:
Attorney, Agent or Firm: Wenderoth, Lind & Ponack

This invention relates to a photoconductor element comprising in the following order 1) a material having wider band gap energy than CdTe, 2) a material primarily consisting of CdTe and 3) a material primarily consisting of ZnTe doped with In. The instant material exhibits characteristics in light sensitivity over entire visible light range, and a low level of dark current and a high speed of light response. This invention further relates to a target for image pickup tube employing the element and a method of making the element.

DETAILED DESCRIPTION What is claimed is: 1.
A photoconductor element, which comprises: a first layer of a suubstance hving a wider band gap encrgy then CdTe; a second layer of a substance primarily consisting of CdTe and deposited on said first layer; and a third layer of a substance primarily consisting of ZnTe containing indium therein and deposited on said second layer.
2.
A photoconductor element according to claim 1, wherein said first and second layers and said second and third layers establish hetero-junctions, respectively.
3.
A photoconductor element according to claim 1, wherein said first layer primarily consists of ZnSe.
4.
A photoconductor element according to claim 1, wherein said first layer primarily consists of Zn.
sub.
1-x Cd.
sub.
x S wherein 0 < x < 0.
3.
5.
A photoconductor element according to claim 1, wherein said second layer contains from 0 to 1 atomic percent of indium.
6.
A photoconductor element according to claim 1, wherein said third layer contains from 0.
03 to 5 atomic percent of indium.
7.
A photoconductor element accoring to claim 3, wherein said second layer contains from 0 to 1 atomic percent of indium.
8.
A photoconductor element according to claim 4, wherein said second layer contains from 0 to 1 atomic percent of indium.
9.
A photoconductor element according to claim 7, wherein said third layer contains from 0.
03 to 5 atomic percent of indium.
10.
A photoconductor element according to claim 8, wherein said third layer contains from 0.
03 to 5 atomic percent of indium.
11.
a photoconductor element according to claim 1, wherein said element further comprises a fourth layer primarily consisting of Sb.
sub.
2 S .
sub.
3 and is formed on the third layer.
12.
A photoconductor element according to claim 9, wherein said element further comprises a fourth layer primarily consisting of Sb.
sub.
2 S.
sub.
3 and is formed on the third layer.
13.
A photoconductor element according to claim 10, wherein element further comprises a fourth layer primarily consisting of Sb.
sub



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