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Photodetecting device having Josephson junctions
| Details |
Inventors: Murakami, Toshiaki; Enomoto, Yoichi; Inamura, Takahiro;
Assignee: Nippon Telegraph & Telephone Public Corporation (Tokyo, JP)
Primary Examiner:
Assistant Examiner:
Attorney, Agent or Firm:
A photodetecting device having Josephson junctions, comprises an insulating substrate, a polycrystalline superconductor film formed on the insulating substrate such that Josephson junctions are formed at grain boundaries, the superconductor film having a first region subjected to light illumination, and second and third regions formed contiguously at both sides of the first region such that a width of each of the second and third regions is wider than that of the first region, an input circuit for supplying a predetermined bias current between the second and third regions, and an output circuit for detecting a change in voltage between the second and third regions, one terminal of said input circuit and one terminal of said output circuit being commonly grounded, wherein the superconductor film comprises BaPb.sub.1-x Bi.sub.x O.sub.3 (where 0.32.ltoreq.x.ltoreq.0.35). This simple photodetecting device can detect an optical signal at high speed with high sensitivity. |
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DETAILED DESCRIPTION It is an object of the present invention to provide a photodetecting device having Josephson junctions and a simple construction, that allows highly sensitive detection of an optical signal, and can reduce background noise.
In order to achieve the above object of the present invention, there is provided a photodetecting device having Josephson junctions, comprising: an insulating substrate; a polycrystalline superconductor film formed on said insulating substrate such that Josephson junctions are formed at grain boundaries, said superconductor film having a first region subjected to light illumination, and second and third regions formed contiguously at both sides of said first region such that a width of each of said second and third regions is wider than that of said first region; means for supplying a predtermined bias current between said second and third regions; and means for detecting a change in voltage between said second and third regions, one terminal of said means for supplying and one terminal of said means for detecting being commonly grounded, wherein said superconductor film comprises BaPb.
sub.
1-x Bi.
sub.
x O.
sub.
3 (where 0.
32.
ltoreq.
.
times.
.
ltoreq.
0.
35 The waveform of an optical signal effectively detected by the photodetecting device of the present invention falls within the range of 1 to 10 .
mu.
m.
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