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Rectifying device for achieving a high power efficiency
| Details |
Inventors: Morizuka, Kouhei;
Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP)
Primary Examiner: Nappi; Robert E.
Assistant Examiner: Han; Y. J.
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
A tunnel diode is used as a rectifying device. The tunnel diode is so implemented as to suppress a flow of a current relative to an applied forward voltage of AC which is greater than a voltage at a peak value of a tunnel current. Stated in another word, use is made of a semiconductor of a wide forbidden band width so as to enable the forward turn-on voltage of the diode to be made greater than a maximum value of the applied voltage. Upon application of a reverse voltage to the diode, on the other hand, a greater tunnel current flows from a zero bias time. By connecting the tunnel diode, unlike an ordinary diode, in a reverse-bias fashion in the rectifying circuit, it is possible to realize a rectifying device whose turn-on voltage is zero and to prevent less rectifying efficiency at a power supply circuit of low voltage. |
|
DETAILED DESCRIPTION OF THE INVENTION One embodiment of the present invention will be explained below with reference to the drawing.
According to the present invention, a tunnel diode having the characteristic as shown in FIG.
1 is used as a rectifying device.
The tunnel diode is so implemented as to suppress a flow of a current relative to an applied forward voltage of AC which is greater than a voltage at a peak value of a tunnel current.
Stated another way, use is made of a semiconductor of a wide forbidden band width so as to enable the forward turn-on voltage of the diode to be made greater than a maximum value of the applied voltage.
Upon application of a reverse voltage to the diode, on the other hand, a greater tunnel current flows from a zero bias time.
By connecting the tunnel diode, unlike an ordinary diode, in a reverse-bias fashion in the rectifying circuit as shown in FIG.
2, it is possible to realize a rectifying device whose turn-on voltage is zero and to prevent less rectifying efficiency at a power supply circuit of low voltage.
In the present embodiment as will be set out below, an explanation will be given below about an example of a tunnel diode using a semiconductor of an .
alpha.
-SiC (hexagonal crystal structure).
FIG.
3 is a cross-sectional view showing such a tunnel diode structure.
Reference numeral 1 shows a p-type region of the .
alpha.
-SiC; 2, an n-type region of the .
alpha.
-SiC; 3, 4, contact electrodes formed on the p- and n-type electrodes; and 5, 6, terminals for applying voltages to the contact electrodes 3, 4.
The p-type region 1 and n-type region 2 have a carrier concentration of over 10.
sup.
20 cm.
sup.
-3 each and are doped with impurities of Al and P (or N) to provide a pn-junction diode.
Here, if a transition between the p-type region and the n-type region is caused to be in precipitous form, the electric field strength of the transition area is made great enough to cause "tunneling" across the bands, so that a tunnel current flows there.
The current/voltage characteristic of the SiC tunnel diode is shown in FIG
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