Semiconductor article and preparation thereof

DETAILED DESCRIPTION An object of the present invention is to provide a semiconductor article which will not generate junction capacitance, parasitic effect, or the like when a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type are formed on the same substrate.
A further object of the present invention is to provide a preparation method suitably used in preparing such a semiconductor article.
The semiconductor article of the present invention has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate, at least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of said insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.
Also, the method for preparing a semiconductor article of the present invention comprises forming a plurality of concavities on an insulator substrate and forming in the concavities a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type, at least said semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of said insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.
In the present invention, the semiconductor single crystal region refers to a region having a single crystal, or substantially single crystal, structure provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center