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Semiconductor memory device with reduced inter-band tunnel current
| Details |
Inventors: Eto, Satoshi;
Assignee: Fujitsu Limited (Kanagawa, JP)
Primary Examiner: Mai; Son
Assistant Examiner:
Attorney, Agent or Firm: Nikaido Marmelstein Murray & Oram LLP
A semiconductor memory device includes word drivers for selectively activating word lines with respect to memory cells. The semiconductor memory device further includes a control unit for controlling a gate voltage of transistors in the word drivers so as to reduce inter-band tunnel currents of the transistors. |
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DETAILED DESCRIPTION Accordingly, it is a general object of the present invention to provide a semiconductor memory device which can satisfy the need described above.
It is another and more specific object of the present invention to provide a semiconductor memory device which can suppress an inter-band tunnel current in word drivers for driving word-selection lines so as to reduce a consumed current during the standby-condition period.
In order to achieve the above objects according to the present invention, a semiconductor memory device includes word drivers for selectively activating word lines with respect to memory cells, and a control unit for controlling a gate voltage of transistors in the word drivers so as to reduce inter-band tunnel currents of the transistors.
In the semiconductor memory device described above, the control unit is provided in order to control the gate voltage of the transistors in the word drivers, so that the inter-band tunnel currents of the transistors can be controlled and reduced.
By effecting this reduction in a standby condition, current consumption during the standby-condition period can be suppressed.
According to one embodiment of the present invention, the word drivers are grouped into a plurality of groups, and the control unit separately controls each of the groups.
Because of this, appropriate control can be individually introduced to each of the groups.
According to another embodiment of the present invention, a plurality of memory blocks, which are comprised of the memory cells, are provided, and the control unit separately controls each of the memory blocks.
This makes it possible that the inter-band tunnel currents are controlled with respect to each memory block.
According to an embodiment of the present invention, the control unit controls the memory blocks differently between selected memory blocks selected for data input/output and unselected memory blocks other than the selected memory blocks, and the inter-band tunnel currents are reduced with respect to the unselected memory blocks
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