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 Sense amplifier power supply circuit

Details
Inventors: Chun, Jun-Hyun;
Assignee: LG Semicon Co., Ltd. (Cheongju, KR)
Primary Examiner: Tran; Toan
Assistant Examiner:
Attorney, Agent or Firm: Fleshner & Kim

A sense amplifier power supply circuit for supplying a power source to a sense amplifier of a semiconductor memory device having two or more memory cell blocks is disclosed including a first power closed circuit for connecting a first power voltage line to a second ground voltage line, a second power closed circuit for connecting a first ground voltage line to a second power voltage line, a first switching transistor for supplying a power voltage to the first power closed circuit, a second switching transistor for supplying a ground voltage to the second power closed circuit, a third switching transistor for supplying the power voltage to the second power closed circuit, and a fourth switching transistor for supplying the ground voltage line to the first power closed circuit. The first power voltage and the first ground voltage line respectively supply the power voltage and the ground voltage to operate sense amplifiers of a first memory cell array; the second power voltage line and the second ground voltage line respectively supply the power voltage and the ground voltage to operate the sense amplifiers of a second memory cell array.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENT For the convenience of description, a sense amplifier power supply circuit of FIG.
3 will be regarded as being formed on first and second memory cell arrays 31 and 32.
In actual, although a plurality of memory cell blocks are formed on a semiconductor memory device and the wiring for connecting one another is formed thereon, only power supply circuits and sense amplifiers will now be shown and described.
A plurality of sense amplifiers are installed on the first memory cell array 31.
In order to operate the plurality of sense amplifiers, there are formed a first power voltage supply line PL for supplying a power voltage Vcc and a first ground voltage supply line NL for supplying a ground voltage Vss.
On the second memory cell array 32, a plurality of sense amplifiers are installed.
In order to operate the plurality of sense amplifiers, a second power voltage supply line PR for supplying the power voltage Vcc and a second ground voltage supply line NR for supplying the ground voltage Vss are formed.
One terminal of the first power voltage supply line PL is connected to one terminal of the second ground voltage supply line NR, and the other terminal of the first power voltage supply line PL is connected to the other terminal of the second ground voltage supply line NR, thereby forming a first power closed circuit 37.
One terminal of the second power voltage supply line PR is connected to one terminal of the first ground voltage supply line NL, and the other terminal of the second power voltage line PR is connected to the other terminal of the first ground voltage line NL, thereby forming a second power closed circuit 38.
A first switching transistor PMOS3 for supplying the power voltage Vcc to the first power closed circuit 37 is connected between the power voltage Vcc and the first power closed circuit 37; a second switching transistor NMOS3 for supplying the ground voltage Vss to the second power closed circuit 38 is connected between the ground voltage Vss and the second power closed circuit 38


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