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Apparatus-method-for-testing-opening-state-for-hole-in-semiconductor-device

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Apparatus method for testing opening state for hole in semiconductor device

Details

Inventors: Nakamura, Toyokazu;
Assignee: NEC Corporation (Tokyo, JP)
Primary Examiner: Le; Que T.
Assistant Examiner:
Attorney, Agent or Firm: Sughrue, Mion, Zinn, Macpeak & Seas, PLLC

A testing apparatus for an opening state of a hole in a semiconductor device includes a laser light radiating system. The semiconductor device has the conductive layer and the insulating layer formed on the conductive layer, and the hole is formed in the insulating layer at aim to reach the conductive layer. The laser light radiating system radiates to a hole, a laser light having a wave length determined based on a work function of a material of a conductive layer and a work function of a material of an insulating layer. A detector detects photoelectrons emitted through a portion of the hole to which the laser light is irradiated. A charge supplementing mechanism supplies electrons to the conductive layer.

DETAILED DESCRIPTION The present invention is accomplished to solve the above-mentioned problems.
Therefore, an object of the present invention is to provide a method for testing an opening state of a hole in a process of manufacturing a semiconductor device and an apparatus for the same.
Another object of the present invention is to provide a method for testing an opening state of many holes, each of which has a large aspect ratio and a small diameter, and an apparatus for the same.
In order to achieve an aspect of the present invention, a testing apparatus for an opening state of a hole in a semiconductor device includes a laser light radiating system.
The semiconductor device has the conductive layer and the insulating layer formed on the conductive layer, and the hole is formed in the insulating layer at aim to reach the conductive layer.
The laser light radiating system irradiates to a hole, a laser light having a wave length determined based on a work function of a material of a conductive layer and a work function of a material of an insulating layer.
A detector detects photoelectrons emitted through a portion of the hole to which the laser light is irradiated.
A charge supplementing mechanism supplies electrons to the conductive layer.
It is desirable that the wave length of the laser light is a wave length corresponding to an energy in a range in which an outer photo-electric effect is performed to the conductive layer but the outer photo-electric effect is not performed to the insulating layer.
Also, the laser light is focused on and irradiated to a bottom surface of the hole.
At that time, it is determined based on the detecting result by the detector whether or not the hole is opened to reach the conductive layer.
The charge supplementing mechanism may include an electron beam source for sending the electrons to the conductive layer.
Instead, the charge supplementing mechanism may be connection of the conductive layer of the semiconductor device to the ground to send the electrons to the conductive layer

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